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參數(shù)資料
| 型號(hào)： | KM416S8030 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2M x 16Bit x 4 Banks Synchronous DRAM |
| 中文描述： | 200萬× 16 × 4銀行同步DRAM |
| 文件頁數(shù)： | 8/10頁 |
| 文件大小： | 116K |
| 代理商： | KM416S8030 |
KM416S8030
CMOS SDRAM
REV. 2 Mar. '98
Preliminary
V
DD
Clamp @CLK,CKE,CS,DQM & DQ
VDD
0.0V
0.2V
0.4V
0.6V
0.7V
0.8V
0.9V
1.0V
1.2V
1.4V
1.6V
1.8V
2.0V
2.2V
2.4V
2.6V
I(mA)
0.0mA
0.0mA
0.0mA
0.0mA
0.0mA
0.0mA
0.0mA
0.23mA
1.34mA
3.02mA
5.06mA
7.35mA
9.83mA
12.48mA
15.30mA
18.31mA
V
SS
Clamp @CLK,CKE,CS,DQM & DQ
VSS
-2.6
-2.4
-2.2
-2.0
-1.8
-1.6
-1.4
-1.2
-1.0
-0.9
-0.8
-0.7
-0.6
-0.4
-0.2
0.0
I(mA)
-57.23mA
-45.77mA
-38.26mA
-31.22mA
-24.58mA
-18.37mA
-12.56mA
-7.57mA
-3.37mA
-1.75mA
-0.58mA
-0.05mA
0.0mA
0.0mA
0.0mA
0.0mA
20
15
10
5
0
0
3
1
2
Voltage
I
I(ma)
I
I(ma)
Minimum VDD Clamp Current
(referenced to VDD)
Minimum VSS Clamp Current
0
-10
-20
-30
-40
-3
0
-2
-1
-50
-60
Voltage
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM416S8030B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| KM416S8030BN | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| KM416S8030BN-G/FH | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| KM416S8030BN-G/FL | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| KM416S8030BT-G/F10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
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