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參數(shù)資料
| 型號： | KM416S8030 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2M x 16Bit x 4 Banks Synchronous DRAM |
| 中文描述： | 200萬× 16 × 4銀行同步DRAM |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 116K |
| 代理商： | KM416S8030 |
KM416S8030
CMOS SDRAM
REV. 2 Mar. '98
Preliminary
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
°
C)
Parameter
Symbol
Test Condition
CAS
Latency
Version
Unit
Note
-8
-H
-L
-10
Operating Current
(One Bank Active)
I
CC1
Burst Length =1
t
RC
≥
t
RC
(min)
I
OL
= 0 mA
130
120
120
115
mA
1
Precharge Standby Current in
power-down mode
I
CC2
P
CKE
≤
V
IL
(max), t
CC
= 15ns
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
1
mA
I
CC2
PS
1
Precharge Standby Current
in non power-down mode
I
CC2
N
CKE
≥
V
IH
(min),CS
≥
V
IH
(min),t
CC
=15ns
Input signals are changed one time during
30ns
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
15
mA
I
CC2
NS
7
Active Standby Current
in power-down mode
I
CC3
P
CKE
≤
V
IL
(max), t
CC
= 15ns
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
5
mA
I
CC3
PS
5
Active Standby Current
in non power-down mode
(One Bank Active)
I
CC3
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 15ns
Input signals are changed one time during
30ns.
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
30
mA
I
CC3
NS
20
mA
Operating Current
(Burst Mode)
I
CC4
I
OL
= 0 mA
Page Burst
t
CCD
= 2CLKs
3
170
145
145
145
mA
1
2
135
145
135
135
Refresh Current
I
CC5
t
RC
≥
t
RC
(min)
200
165
mA
2
Self Refresh Current
I
CC6
CKE
≤
0.2V
1
mA
3
600
uA
4
1. Measured with outputs open.
2. Refresh period is 64ms.
3. KM416S8030T-G**
4. KM416S8030T-F**
Note :
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| KM416S8030B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| KM416S8030BN | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| KM416S8030BN-G/FH | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| KM416S8030BN-G/FL | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| KM416S8030BT-G/F10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
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