- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373156 > KM416S4031B (SAMSUNG SEMICONDUCTOR CO. LTD.) 1M x 16Bit x 4 Banks Synchronous DRAM with SSTL interface(1M x 16位 x4組同步動(dòng)態(tài)RAM（帶SSTL接口）) PDF資料下載
參數(shù)資料
| 型號(hào)： | KM416S4031B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x 16Bit x 4 Banks Synchronous DRAM with SSTL interface(1M x 16位 x4組同步動(dòng)態(tài)RAM（帶SSTL接口）) |
| 中文描述： | 100萬× 16 × 4銀行同步DRAM接口與薩里衛(wèi)星技術(shù)有限公司（100萬× 16位x4組同步動(dòng)態(tài)隨機(jī)存儲(chǔ)器（帶SSTL公司接口）） |
| 文件頁數(shù)： | 4/40頁 |
| 文件大?。?/td> | 590K |
| 代理商： | KM416S4031B |
第1頁第2頁第3頁當(dāng)前第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁
KM416S4031B
CMOS SDRAM
REV. 0 Mar. '98
Preliminary
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
°
C)
Parameter
Symbol
Test Condition
CAS
Latency
Version
Unit
Note
-7
-S
-8
Operating current
(One bank active)
I
CC1
Burst length = 1
t
RC
≥
t
RC
(min)
I
OL
= 0 mA
120
115
110
mA
1
Precharge standby current in
power-down mode
I
CC2
P
CKE
≤
V
IL
(max), t
CC
= 15ns
2
mA
I
CC2
PS
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
2
Precharge standby current in
non power-down mode
I
CC2
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 15ns
Input signals are changed one time during 30ns
20
mA
I
CC2
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
10
Active standby current in
power-down mode
I
CC3
P
CKE
≤
V
IL
(max), t
CC
= 15ns
3
mA
I
CC3
PS
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
2
Active standby current in
non power-down mode
(One bank active)
I
CC3
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 15ns
Input signals are changed one time during 30ns
30
mA
I
CC3
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
25
mA
Operating current
(Burst mode)
I
CC4
I
OL
= 0 mA
Page burst
2 Banks activated
t
CCD
= 2CLKs
3
170
160
150
mA
1
2
120
115
110
Refresh current
I
CC5
t
RC
≥
t
RC
(min)
160
155
150
mA
2
Self refresh current
I
CC6
CKE
≤
V
IL
(max)
2
mA
1. Measured with outputs open.
2. Refresh period is 64ms.
Notes :
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM416S4031C | 1M x 16Bit x 4 Banks Synchronous DRAM with SSTL interface(1M x 16位 x4組同步動(dòng)態(tài)RAM（帶SSTL接口）) |
| KM416S8030BN | 128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| KM416S8030B | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| KM416S8030 | 2M x 16Bit x 4 Banks Synchronous DRAM |
| KM416V1004A | 1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM416S8030 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 16Bit x 4 Banks Synchronous DRAM |
| KM416S8030B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| KM416S8030BN | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| KM416S8030BN-G/FH | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| KM416S8030BN-G/FL | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。