參數(shù)資料
型號: KM416S1120D
廠商: Electronic Theatre Controls, Inc.
英文描述: 512K x 16bit x 2 Banks Synchronous DRAM LVTTL
中文描述: 為512k × 16位× 2銀行同步DRAM LVTTL
文件頁數(shù): 39/43頁
文件大?。?/td> 1131K
代理商: KM416S1120D
KM416S1120D
CMOS SDRAM
- 39
Rev. 1.4 (Jun. 1999)
0
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9
10
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Burst Read Single bit Write Cycle @Burst Length=2
HIGH
Row Active
(A-Bank)
Row Active
(A-Bank)
Write with
Auto Precharge
(B-Bank)
: Don't care
*Note :
1. BRSW modes is enabled by setting A
9
"High" at MRS (Mode Register Set).
At the BRSW Mode, the burst length at write is fixed to "1" regaredless of programmed burst length.
2. When BRSW write command with auto precharge is executed, keep it in mind that t
RAS
should not be violated.
Auto precharge is executed at the burst-end cycle, so in the case of BRSW write command,
the next cycle starts the precharge.
Write
(A-Bank)
*Note 1
Row Active
(B-Bank)
Read
(A-Bank)
Read with
Auto Precharge
(A-Bank)
Precharge
(A-Bank)
*Note 2
BA
A
10
/AP
CL=2
CL=3
DQ
ADDR
CAS
RAS
CS
CKE
CLOCK
WE
DQM
DAa0
DAa0
QAb0
QAb1
QAb0
QAb1
DBc0
DBc0
QAd0
QAd1
QAd0
QAd1
RAa
CAa
RBb
CAb
RAc
CBc
CAd
RAc
RAa
RBb
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相關代理商/技術參數(shù)
參數(shù)描述
KM416S1120DT-G/F10 制造商:未知廠家 制造商全稱:未知廠家 功能描述:512K x 16bit x 2 Banks Synchronous DRAM LVTTL
KM416S1120DT-G/F6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 16bit x 2 Banks Synchronous DRAM LVTTL
KM416S1120DT-G/F7 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 16bit x 2 Banks Synchronous DRAM LVTTL
KM416S1120DT-G/F8 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 16bit x 2 Banks Synchronous DRAM LVTTL
KM416S1120DT-G/FC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:512K x 16bit x 2 Banks Synchronous DRAM LVTTL