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參數(shù)資料
| 型號： | KM416RD16AD |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | CAP ELECT 47UF 100V TG SMD |
| 中文描述： | 128/144Mbit RDRAM的256 × 16/18位× 2 * 16屬銀行直接RDRAMTM |
| 文件頁數(shù)： | 60/64頁 |
| 文件大?。?/td> | 4052K |
| 代理商： | KM416RD16AD |
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Page 57
KM416RD8AC(D)/KM418RD8AC(D)
Direct RDRAM
Rev. 1.01 Oct. 1999
This circuit does not include pin coupling effects that are
often present in the packaged device. Because coupling
effects make the effective single-pin inductance L
I
, and
capacitance C
I
, a function of neighboring pins, these param-
eters are intrinsically data-dependent. For purposes of speci-
fying the device electrical loading on the Channel, the
effective L
I
and C
I
are defined as the worst-case values over
all specified operating conditions.
L
I
is defined as the effective pin inductance based on the
device pin assignment. Because the pad assignment places
each RSL signal adjacent to an AC ground (a Gnd or Vdd
pin), the effective inductance must be defined based on this
configuration. Therefore, L
I
assumes a loop with the RSL
pin adjacent to an AC ground.
C
I
is defined as the effective pin capacitance based on the
device pin assignment. It is the sum of the effective package
pin capacitance and the IO pad capacitance.
Table 25: RSL Pin Parasitics
Symbol
Parameter and Conditions - RSL pins
IO freq.
Min
Max
Unit
L
I
RSL effective input inductance
4.0
nH
L
12
Mutual inductance between any DQA or DQB RSL signals.
0.2
nH
Mutual inductance between any ROW or COL RSL signals.
0.6
nH
L
I
Difference in L
I
value between any RSL pins of a single device.
-
1.8
nH
C
I
RSL effective input capacitance
a
-800
2.0
2.4
pF
-711
2.0
2.4
-600
2.0
2.6
C
12
Mutual capacitance between any RSL signals.
-
0.1
pF
C
I
Difference in C
I
value between average of CTM/CFM and any RSL
pins of a single device.
-
0.06
pF
R
I
RSL effective input resistance
4
15
a. This value is a combination of the device IO circuitry and package capacitances.
Table 26: CMOS Pin Parasitics
Symbol
Parameter and Conditions - CMOS pins
Min
Max
Unit
L
I ,CMOS
CMOS effective input inductance
8.0
nH
C
I ,CMOS
CMOS effective input capacitance (SCK,CMD)
a
1.7
2.1
pF
C
I ,CMOS,SIO
CMOS effective input capacitance (SIO1, SIO0)
a
-
7.0
pF
a. This value is a combination of the device IO circuitry and package capacitances.
相關PDF資料 |
PDF描述 |
|---|---|
| KM416RD16C | 15VPP 74DB 2 TERM CERAM BUZZER |
| KM416RD16D | 15VPP 86DB 2 TERM CERAM BUZZER |
| KM416RD2AC | 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| KM416RD2AD | 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| KM416RD2C | 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| KM416RD16C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| KM416RD16D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| KM416RD2AC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| KM416RD2AD | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| KM416RD2C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
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