- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374353 > KM29V64000T (SAMSUNG SEMICONDUCTOR CO. LTD.) 8M x 8 Bit NAND Flash Memory(8M x 8位 NAND閃速存儲(chǔ)器) PDF資料下載
參數(shù)資料
| 型號(hào)： | KM29V64000T |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 8M x 8 Bit NAND Flash Memory(8M x 8位 NAND閃速存儲(chǔ)器) |
| 中文描述： | 8米× 8位NAND閃存（8米× 8位的NAND閃速存儲(chǔ)器） |
| 文件頁(yè)數(shù)： | 7/24頁(yè) |
| 文件大?。?/td> | 293K |
| 代理商： | KM29V64000T |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)當(dāng)前第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)
KM29V64000T
FLASH MEMORY
7
MODE SELECTION
NOTE
: 1. X can be V
IL
or V
IH.
2. WP should be biased to CMOS high or CMOS low for standby.
3. When SE is high, spare area is deselected.
CLE
ALE
CE
WE
RE
SE
WP
Mode
H
L
L
H
X
X
Read Mode
Command Input
L
H
L
H
X
X
Address Input(3clock)
H
L
L
H
X
H
Write Mode
Command Input
L
H
L
H
X
H
Address Input(3clock)
L
L
L
H
L/H
(3)
X
Data Input
L
L
L
H
L/H
(3)
X
Sequential Read & Data Output
L
L
L
H
H
L/H
(3)
X
During Read(Busy)
X
X
X
X
X
L/H
(3)
H
During Program(Busy)
X
X
X
X
X
X
H
During Erase(Busy)
X
X
(1)
X
X
X
X
L
Write Protect
X
X
H
X
X
0V/V
CC
(2)
0V/V
CC
(2)
Stand-by
CAPACITANCE
(
T
A
=25
°
C, V
CC
=3.3V, f=1.0MHz)
NOTE
: Capacitance is periodically sampled and not 100% tested.
Item
Symbol
Test Condition
Min
Max
Unit
Input/Output Capacitance
C
I/O
V
IL
=0V
-
10
pF
Input Capacitance
C
IN
V
IN
=0V
-
10
pF
VALID BLOCK
NOTE
:
1. The KM29V64000 may or may not include bad blocks. Bad blocks are defined as blocks that contain one or more bad bits. Do not try to access these
bad blocks for program and erase. The Minimum valid blocks are guaranteed for 10 years data
retention or 1M program erase cycling. (Refer to the
attached technical notes)
2. The 1st block, which is placed on 00h block address, is guaranteed to be a good block
Parameter
Symbol
Min
Typ.
Max
Unit
Valid Block Number
N
VB
1014
1020
1024
Blocks
Program/Erase Characteristics
Parameter
Symbol
Min
Typ
Max
Unit
Program Time
t
PROG
-
0.2
1.0
ms
Number of Partial Program Cycles in the Same Page
Nop
-
-
10
cycles
Block Erase Time
t
BERS
-
2
4
ms
AC TEST CONDITION
(KM29V64000T:T
A
=0 to 70
°
C,
V
CC
=3.3V
unless otherwise noted)
Parameter
Value
Input Pulse Levels
0.4V to 2.4V
Input Rise and Fall Times
5ns
Input and Output Timing Levels
0.8V and 2.0V
Output Load
1 TTL GATE and CL = 100pF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM29V64001RS | 8M X 8 BIT NAND FLASH MEMORY |
| KM29V64001TS | 8M X 8 BIT NAND FLASH MEMORY |
| KM29V64001T | 8M X 8 BIT NAND FLASH MEMORY |
| KM29W040AIT | 512K x 8 Bit NAND Flash Memory(512K x 8位 NAND閃速存儲(chǔ)器) |
| KM29W16000AIT | 2M x 8 Bit NAND Flash Memory(2M x 8位 NAND閃速存儲(chǔ)器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM29V64000TS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M X 8 BIT NAND FLSH MEMORY |
| KM29V64001RS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M X 8 BIT NAND FLASH MEMORY |
| KM29V64001T | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M X 8 BIT NAND FLASH MEMORY |
| KM29V64001TS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M X 8 BIT NAND FLASH MEMORY |
| KM29W040AT | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 8 bit NAND Flash Memory |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。