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參數(shù)資料
| 型號： | KM29V32000TS |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4M x 8 Bit NAND Flash Memory(4M x 8位 NAND閃速存儲器) |
| 中文描述： | 4米× 8位NAND閃存（4米× 8位的NAND閃速存儲器） |
| 文件頁數(shù)： | 21/24頁 |
| 文件大?。?/td> | 301K |
| 代理商： | KM29V32000TS |
KM29V32000TS
FLASH MEMORY
21
READ STATUS
The device contains a Status Register which may be read to find out whether program or erase operation is complete, and whether
the program or erase operation completed successfully. After writing 70H command to the command register, a read cycle outputs
the contents of the Status Register to the I/O pins on the falling edge of CE or RE, whichever occurs last. This two line control allows
the system to poll the progress of each device in multiple memory connections even when R/ B pins are common-wired. RE or CE
does not need to be toggled for updated status. Refer to table 2 for specific Status Register definitions. The command register
remains in Status Read mode until further commands are issued to it. Therefore, if the status register is read during a random r ead
cycle, a read command(00H or 50H) should be given before sequential page read cycle.
SR
Status
Definition
I/O
0
Program / Erase
"0" : Successful Program / Erase
"1" : Error in Program / Erase
I/O
1
Reserved for Future
Use
"0"
I/O
2
"0"
I/O
3
"0"
I/O
4
"0"
I/O
5
Erase Suspend
"0" : Erase in Progress / Completed
"1" : Suspended
I/O
6
Device Operation
"0" : Busy "1" : Ready
I/O
7
Write Protect
"0" : Protected "1" : Not Protected
Table2. Status Register Definition
Figure 9. Read ID Operation
READ ID
The device contains a product identification mode, initiated by writing 90H to the command register, followed by an address inpu t of
00H. Two read cycles sequentially output the manufacture code(ECH), and the device code (Note*) respectively. The command reg-
ister remains in Read ID mode until further commands are issued to it. Figure 9 shows the operation sequence.
CE
CLE
I/O
0
~
7
ALE
RE
WE
90H
00
ECH
Note*
Address. 1 cycle
Maker code
Device code
t
READID
t
AR1
t
CR
Note* KM29V32000 : E3H
KM29N32000 : E5H
KM29W32000 : E3H
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM29V32000T | 4M x 8 Bit NAND Flash Memory(4M x 8位 NAND閃速存儲器) |
| KM29V64000R | FLASH |
| KM29V64000TS | 8M X 8 BIT NAND FLSH MEMORY |
| KM29V64000T | 8M x 8 Bit NAND Flash Memory(8M x 8位 NAND閃速存儲器) |
| KM29V64001RS | 8M X 8 BIT NAND FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM29V64000R | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH |
| KM29V64000TS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M X 8 BIT NAND FLSH MEMORY |
| KM29V64001RS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M X 8 BIT NAND FLASH MEMORY |
| KM29V64001T | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M X 8 BIT NAND FLASH MEMORY |
| KM29V64001TS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M X 8 BIT NAND FLASH MEMORY |
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