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參數(shù)資料
| 型號： | KM29V32000TS |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4M x 8 Bit NAND Flash Memory(4M x 8位 NAND閃速存儲器) |
| 中文描述： | 4米× 8位NAND閃存（4米× 8位的NAND閃速存儲器） |
| 文件頁數(shù)： | 15/24頁 |
| 文件大?。?/td> | 301K |
| 代理商： | KM29V32000TS |
KM29V32000TS
FLASH MEMORY
15
BLOCK ERASE OPERATION
(ERASE ONE BLOCK)
CE
CLE
R/B
I/O
0
~
7
WE
ALE
RE
60H
A
17
~ A
21
A
9
~ A
16
Auto Block Erase Setup Command
Erase Command
Read Status
Command
I/O0=1 Error in Erase
DOH
70H
I/O
0
Busy
t
WB
t
BERS
t
WC
t
WC
Block
Address
I/O0=0 Successful Erase
SUSPEND & RESUME OPERATION DURING BLOCK ERASE
CE
CLE
R/B
I/O
0
~
7
WE
ALE
RE
60H
A
17
~ A
21
A
9
~ A
16
Auto Block Erase Setup Command
Program/Read
Function are
Acceptable
D0H
70H
I/O
0
Busy
B0H
D0H
t
WB
Block Address
Resume
Suspend
t
WB
t
RHW
t
SR
I/O
0
=0 Successful Erase
I/O
0
=1 Error in Erase
≈
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM29V32000T | 4M x 8 Bit NAND Flash Memory(4M x 8位 NAND閃速存儲器) |
| KM29V64000R | FLASH |
| KM29V64000TS | 8M X 8 BIT NAND FLSH MEMORY |
| KM29V64000T | 8M x 8 Bit NAND Flash Memory(8M x 8位 NAND閃速存儲器) |
| KM29V64001RS | 8M X 8 BIT NAND FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM29V64000R | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH |
| KM29V64000TS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M X 8 BIT NAND FLSH MEMORY |
| KM29V64001RS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M X 8 BIT NAND FLASH MEMORY |
| KM29V64001T | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M X 8 BIT NAND FLASH MEMORY |
| KM29V64001TS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M X 8 BIT NAND FLASH MEMORY |
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