參數(shù)資料
型號(hào)： KM29U128IT
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 16M x 8 Bit NAND Flash Memory
中文描述： 1,600 × 8位NAND閃存
文件頁(yè)數(shù)： 22/26頁(yè)
文件大?。?/td> 481K
代理商： KM29U128IT
KM29U128T, KM29U128IT
FLASH MEMORY
22
Figure 6. Sequential Row Read2 Operation
PAGE PROGRAM
The device is programmed basically on a page basis, but it does allow multiple partial page programing of a byte or consecutive
bytes up to 528, in a single page program cycle. The number of consecutive partial page programming operation within the same
page without an intervening erase operation should not exceed 2 for main array and 3 for spare array. The addressing may be done
in any random order in a block. A page program cycle consists of a serial data loading period in which up to 528 bytes of data may be
loaded into the page register, followed by a non-volatile programming period where the loaded data is programmed into the appropri-
ate cell. Serial data loading can be started from 2nd half array by moving pointer. About the pointer operation, please refer to the
attached technical notes.
In order to serial data loading period begins by inputting the Serial Data Input command(80H), followed by the three cycle address
input and then serial data loading. The bytes other than those to be programmed do not need to be loaded.The Page Program con-
firm command(10H) initiates the programming process. Writing 10H alone without previously entering the serial data will not initiate
the programming process. The internal write controller automatically executes the algorithms and timings necessary for program and
verify, thereby freeing the CPU for other tasks. Once the program process starts, the Read Status Register command may be
entered, with RE and CE low, to read the status register. The CPU can detect the completion of a program cycle by monitoring the
R/B output, or the Status bit(I/O 6) of the Status Register. Only the Read Status command and Reset command are valid while pro-
gramming is in progress. When the Page Program is complete, the Write Status Bit(I/O 0) may be checked(Figure 7). The internal
write verify detects only errors for "1"s that are not successfully programmed to "0"s. The command register remains in Read Status
command mode until another valid command is written to the command register.
50H
A
0
~ A
3
& A
9
~ A
23
I/O
0
~
7
R/B
Start Add.(3Cycle)
Data Output
Data Output
Data Output
2nd
Nth
(16Byte)
(16Byte)
Data Field
Spare Field
1st
2nd
Nth
(A
4
~ A
7
:
Don
t Care)
1st
Figure 7. Program & Read Status Operation
80H
A
0
~ A
7
& A
9
~ A
23
528 Byte Data
I/O
0
~
7
R/B
Address & Data Input
I/O
0
Pass
10H
70H
Fail
t
R
t
R
t
R
t
PROG
≈
相關(guān)PDF資料
PDF描述
KM29U128T 16M x 8 Bit NAND Flash Memory
KM29U64000IT 8M x 8 Bit NAND Flash Memory
KM29U64000T 8M x 8 Bit NAND Flash Memory
KM29U64000K1 8M x 8 Bit NAND Flash Memory(8M x 8位 NAND閃速存儲(chǔ)器)
KM29V040IT 512K x 8 Bit NAND Flash Memory(512K x 8位 NAND閃速存儲(chǔ)器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KM29U128T 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
KM29U64000IT 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory
KM29U64000T 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory
KM29V16000AIT 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KM29V16000AR 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M X 8 BIT NAND FLASH MEMORY
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