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參數(shù)資料
| 型號(hào)： | KM29U128IT |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 16M x 8 Bit NAND Flash Memory |
| 中文描述： | 1,600 × 8位NAND閃存 |
| 文件頁(yè)數(shù)： | 10/26頁(yè) |
| 文件大小： | 481K |
| 代理商： | KM29U128IT |
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KM29U128T, KM29U128IT
FLASH MEMORY
10
NAND Flash Technical Notes
(Continued)
Program Flow Chart
Start
SR. 6 = 1
or R/B = 1
Write 00H
SR. 0 = 0
No
*
If ECC is used, this verification
operation is not needed.
Write 80H
Write Address
Write Data
Write 10H
Write 70H
Write Address
Wait for tR Time
Verify Data
No
Program Completed
Program Error
Yes
No
Yes
*
Program Error
Yes
: If program operation results in an error, map out
the block including the page in error and copy the
target data to another block.
*
Error in write or read operation
Over its life time, the additional invalid blocks may occur. Through the tight process control and intensive testing, Samsung mini-
mizes the additional block failure rate, which is projected below 0.1% up until 1million program/erase cycles. Refer to the qualification
report for the actual data.The following possible failure modes should be considered to implement a highly reliable system.
Failure Mode
Detection and Countermeasure sequence
Write
Erase Failure
Status Read after Erase --> Block Replacement
Program Failure
Status Read after Program --> Block Replacement
Read back ( Verify after Program) --> Block Replacement
or ECC Correction
Read
Single Bit Failure
Verify ECC -> Block Replacement or ECC Correction
ECC
: Error Correcting Code --> Hamming Code etc.
Example) 1bit correction & 2bit detection
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM29U128T | 16M x 8 Bit NAND Flash Memory |
| KM29U64000IT | 8M x 8 Bit NAND Flash Memory |
| KM29U64000T | 8M x 8 Bit NAND Flash Memory |
| KM29U64000K1 | 8M x 8 Bit NAND Flash Memory(8M x 8位 NAND閃速存儲(chǔ)器) |
| KM29V040IT | 512K x 8 Bit NAND Flash Memory(512K x 8位 NAND閃速存儲(chǔ)器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM29U128T | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
| KM29U64000IT | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory |
| KM29U64000T | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory |
| KM29V16000AIT | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:FLASH MEMORY |
| KM29V16000AR | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:2M X 8 BIT NAND FLASH MEMORY |
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