參數(shù)資料
型號: KM29U128IT
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 16M x 8 Bit NAND Flash Memory
中文描述: 1,600 × 8位NAND閃存
文件頁數(shù): 15/26頁
文件大?。?/td> 481K
代理商: KM29U128IT
KM29U128T, KM29U128IT
FLASH MEMORY
15
* Input Data Latch Cycle
CE
CLE
WE
I/O
0
~
7
DIN 0
DIN 1
DIN 511
ALE
t
ALS
t
CLH
t
WC
t
CH
t
DS
t
DH
t
DS
t
DH
t
DS
t
DH
t
WP
t
WH
t
WP
t
WP
* Sequential Out Cycle after Read
(CLE=L, WE=H, ALE=L)
RE
CE
R/B
I/O
0
~
7
Dout
Dout
Dout
t
RC
t
REA
t
RR
t
RHZ*
t
REA
t
REH
t
REA
t
CHZ*
t
RHZ
NOTES :
Transition is measured
±
200mV from steady state voltage with load.
This parameter is sampled and not 100% tested.
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KM29U128T 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
KM29U64000IT 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory
KM29U64000T 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory
KM29V16000AIT 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KM29V16000AR 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M X 8 BIT NAND FLASH MEMORY