參數(shù)資料
型號(hào): KFG1216Q2A-DID5
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: FLASH MEMORY
中文描述: 閃存
文件頁數(shù): 92/114頁
文件大小: 1382K
代理商: KFG1216Q2A-DID5
OneNAND512(KFG1216x2A-xxB5)
FLASH MEMORY
92
5.1 AC Test Conditions
Parameter
Value
Input Pulse Levels
0V to V
CC
Input Rise and Fall Times
CLK
3ns
other inputs
5ns
Input and Output Timing Levels
V
CC
/2
Output Load
C
L
= 30pF
0V
V
CC
V
CC
/2
V
CC
/2
Input Pulse and Test Point
Input & Output
Test Point
Output Load
Device
Under
Test
* C
L
= 30pF including scope
and Jig capacitance
5.2 Device Capacitance
CAPACITANCE
(T
A
= 25
°
C, V
CC
= 1.8V/2.65V/3.3V, f = 1.0MHz)
NOTES:
1. The
device
may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks is pre-
sented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits
.
Do not erase or program
factory-marked bad blocks.
2. The 1st block, which is placed on 00h block address, is fully guaranteed to be a valid block.
Parameter
Symbol
Min
Typ.
Max
Unit
Valid Block Number
N
VB
502
-
512
Blocks
NOTE
: Capacitance is periodically sampled and not 100% tested.
Item
Symbol
Test Condition
KFG1216x2A
Unit
Min
Max
Input Capacitance
C
IN1
V
IN
=0V
-
10
pF
Control Pin Capacitance
C
IN2
V
IN
=0V
-
10
pF
Output Capacitance
C
OUT
V
OUT
=0V
-
10
pF
INT Capacitance
C
INT
V
OUT
=0V
-
15
pF
5.3 Valid Block Characteristics
5.0 AC CHARACTERISTICS
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