參數(shù)資料
型號(hào): KFG1216D2A-FIB5
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: FLASH MEMORY
中文描述: 閃存
文件頁數(shù): 49/114頁
文件大?。?/td> 1382K
代理商: KFG1216D2A-FIB5
OneNAND512(KFG1216x2A-xxB5)
FLASH MEMORY
49
This Read/Write register shows the NAND Flash block address in the Write Protection mode. Setting this register precedes a 'Lock
Block' command, 'Unlock Block' command, or ’Lock-Tight' Command.
F24Ch, default = 0000h
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
Reserved(0000000)
SBA
Device
Number of Block
SBA
512Mb
512
[8:0]
SBA Information[9:0]
Item
Definition
Description
SBA
Start Block Address
Precedes Lock Block, Unlock Block, or Lock-Tight commands
2.8.23 Start Block Address Register F24Ch (R/W)
Erase Interrupt (EI)
This is the Erase interrupt bit.
EI Interrupt [5]
Status
Conditions
Default State
Valid
State
Interrupt
Function
Cold
Warm/hot
0
0
0
off
sets itself to ’1’
At the completion of an Erase Operation
(0094h, 0095h, 0030h)
0
1
Pending
clears to ’0’
’0’ is written to this bit, or
Cold/Warm/Hot reset is being performed
1
0
off
Reset Interrupt (RSTI)
This is the Reset interrupt bit.
RSTI Interrupt [4]
Status
Conditions
Default State
Valid
State
Interrupt
Function
Cold
Warm/hot
0
1
0
off
sets itself to ’1’
At the completion of an Reset Operation
(00B0h, 00F0h, 00F3h or
warm reset is released)
0
1
Pending
clears to ’0’
’0’ is written to this bit
1
0
off
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