參數(shù)資料
型號: KFG1216D2A-FED6
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: FLASH MEMORY
中文描述: 閃存
文件頁數(shù): 80/114頁
文件大?。?/td> 1382K
代理商: KFG1216D2A-FED6
OneNAND512(KFG1216x2A-xxB5)
FLASH MEMORY
80
OTP Program Operation Flow Chart
Write ’FBA’ of Flash
1)
Add: F100h DQ=FBA
Start
Data Input
Completed
Write ’OTP Access’ Command
Add: F220h DQ=0065h
Write ’FPA, FSA’ of Flash
Add: F107h DQ=FPA, FSA
Write ’BSA, BSC’ of DataRAM
Add: F200h DQ=BSA, BSC
Write Data into DataRAM
2)
Add: DP DQ=Data-in
OTP Programming completed
Write Program command
DQ=0080h or 001Ah
Automatically
checked
Wait for INT register
low to high transition
Add: F241h DQ[15]=INT
NO
Add: F220h
Wait for INT register
low to high transition
Add: F241h DQ[15]=INT
Write 0 to interrupt register
Add: F241h DQ=0000h
Do Cold/Warm/Hot
/NAND Flash Core reset
OTP Exit
Update Controller
Status Register
Add: F240h
Wait for INT register
low to high transition
Add: F241h DQ[15]=INT
OTP Exit
Automatically
updated
OTP
L
=0
YES
NO
Read Controller
Status Register
Add: F240h DQ[10]=1(Error)
DQ[14]=1(Lock), DQ[10]=1(Error)
2) Data input could be done anywhere between "Start" and "Write Program Command".
Write ’FBA’ of Flash
Add: F100h DQ=FBA
3)
Note 1) FBA(NAND Flash Block Address) could be any address.
Read Controller
Status Register
Add: F240h DQ[10]=0(Pass)
Do Cold/Warm/Hot
/NAND Flash Core reset
Write 0 to interrupt register
Add: F241h DQ=0000h
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