參數(shù)資料
型號(hào): KDV239E
廠商: KEC Holdings
英文描述: VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF RADIO)
中文描述: 變?nèi)荻O管外延硅平面二極管(VCO的超高頻無(wú)線電)
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 70K
代理商: KDV239E
2000. 3. 7
1/2
SEMICONDUCTOR
TECHNICAL DATA
KDV239E
Revision No : 0
VCO FOR UHF RADIO.
FEATURES
Ultra Low Series Resistance : r
S
=0.44
(Typ.)
Small Package. (ESC Package)
MAXIMUM RATING (Ta=25
)
ESC
DIM
A
B
C
D
E
F
MILLIMETERS
1.60 0.10
1.20 0.10
0.80 0.10
0.30 0.05
0.60 0.10
0.13 0.05
+
C
D
C
B
A
1
2
E
1. ANODE
2. CATHODE
F
+
+
+
+
+
ELECTRICAL CHARACTERISTICS (Ta=25
)
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
Type Name
Marking
J
U
CHARACTERISTIC
SYMBOL
RATING
UNIT
Reverse Voltage
V
R
15
V
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Reverse Voltage
V
R
I
R
=1
A
15
-
-
V
Reverse Current
I
R
V
R
=15V
-
-
3
nA
Capacitance
C
2V
V
R
=2V, f=1MHz
3.8
4.25
4.7
pF
C
10V
V
R
=10V, f=1MHz
1.5
1.75
2.0
Capacitance Ratio
K
C
2V
/C
10V
, f=1MHz
2.0
2.4
-
Series Resistance
r
S
V
R
=1V, f=470MHz
-
0.44
0.6
相關(guān)PDF資料
PDF描述
KDV239 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF RADIO)
KDV240E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF RADIO)
KDV240 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF RADIO)
KDV245E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF BAND RADIO)
KDV245 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF BAND RADIO)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KDV239E_0012 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:ESC PACKAGE
KDV240 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF RADIO)
KDV240E 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF RADIO)
KDV240E_0302 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:ESC PACKAGE
KDV240E_07 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:SILICON EPITAXIAL PLANAR DIODE