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參數(shù)資料
| 型號： | KDV245 |
| 廠商： | KEC Holdings |
| 英文描述： | VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF BAND RADIO) |
| 中文描述： | 變?nèi)荻O管外延硅平面二極管（壓控振蕩器UHF波段收音機(jī)） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 386K |
| 代理商： | KDV245 |
2003. 1. 27
1/2
SEMICONDUCTOR
TECHNICAL DATA
KDV245
Revision No : 0
VCO FOR UHF Band Radio.
FEATURES
High Capacitance Ratio : C
0.5V
/C
2.5V
=2.5(Typ.)
Low Series Resistance : r
s
=0.35
Useful for Small Size Tuner.
(Typ.)
MAXIMUM RATING (Ta=25
)
USC
DIM
MILLIMETERS
+
+
A
B
C
D
E
F
G
H
J
K
2.50 0.1
1.25 0.05
0.90+
0.30+0.06/-0.04
1.70+
MIN 0.17
0.126+
0~0.1
0.15 0.05
+
+
0.4 0.05
2 +4/-2
L
M
4~6
I
1.0 MAX
C
M
M
I
C
J
G
D
2
1
B
1. ANODE
2. CATHODE
E
K
A
F
H
L
ELECTRICAL CHARACTERISTICS (Ta=25
)
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
Type Name
Marking
E D
CHARACTERISTIC
SYMBOL
RATING
UNIT
Reverse Voltage
V
R
10
V
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Reverse Voltage
V
R
I
R
=1 A
10
-
-
V
Reverse Current
I
R
V
R
=10V
-
-
3
nA
Capacitance
C
0.5V
V
R
=0.5V, f=1MHz
7.3
-
8.4
pF
C
2.5V
V
R
=2.5V, f=1MHz
2.75
-
3.4
Capacitance Ratio
K
C
0.5V
/C
2.5V
, f=1MHz
2.4
2.5
-
Series Resistance
r
S
V
R
=1V, f=470MHz
-
0.35
-
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KDV245E | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF BAND RADIO) |
| KDV251 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR CB,C/P PLL) |
| KDV251M | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:SILICON EPITAXIAL PLANAR DIODE |
| KDV251M_02 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:SILICON EPITAXIAL PLANAR DIODE |
| KDV251S | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:SOT-23 PACKAGE |
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