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參數資料
| 型號： | KDV239 |
| 廠商： | KEC Holdings |
| 英文描述： | VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF RADIO) |
| 中文描述： | 變容二極管外延硅平面二極管（VCO的超高頻無線電） |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 72K |
| 代理商： | KDV239 |
2001. 6. 11
1/2
SEMICONDUCTOR
TECHNICAL DATA
KDV239
Revision No : 1
VCO FOR UHF RADIO.
FEATURES
Ultra Low Series Resistance : r
S
=0.44
(Typ.)
Small Package.
MAXIMUM RATING (Ta=25
)
USC
DIM
A
MILLIMETERS
2.50 0.1
1.25 0.05
0.90 0.05
0.30+0.06/-0.04
1.70+
MIN 0.17
0.126+
0~0.1
1.0 MAX
+
+
B
C
D
E
F
G
H
I
J
K
L
M
0.15 0.05
0.4 0.05
2 +4/-2
4~6
C
M
M
I
C
J
G
D
2
1
B
1. ANODE
2. CATHODE
E
K
A
F
H
L
+
+
+
ELECTRICAL CHARACTERISTICS (Ta=25
)
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
Type Name
Marking
J
U
CHARACTERISTIC
SYMBOL
RATING
UNIT
Reverse Voltage
V
R
15
V
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Reverse Voltage
V
R
I
R
=1
A
15
-
-
V
Reverse Current
I
R
V
R
=15V
-
-
3
nA
Capacitance
C
2V
V
R
=2V, f=1MHz
3.8
4.25
4.7
pF
C
10V
V
R
=10V, f=1MHz
1.5
1.75
2.0
Capacitance Ratio
K
C
2V
/C
10V
, f=1MHz
2.0
2.4
-
Series Resistance
r
S
V
R
=1V, f=470MHz
-
0.44
0.6
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