參數(shù)資料
型號(hào): K9F6408U0C-T
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 8M x 8 Bit NAND Flash Memory
中文描述: 8米× 8位NAND閃存
文件頁(yè)數(shù): 23/30頁(yè)
文件大?。?/td> 784K
代理商: K9F6408U0C-T
FLASH MEMORY
23
K9F6408U0C
BLOCK ERASE OPERATION
(ERASE ONE BLOCK)
MANUFACTURE & DEVICE ID READ OPERATION
CE
CLE
R/B
I/O
0
~
7
WE
ALE
RE
60h
A
17
~ A
22
A
9
~ A
16
Auto Block Erase
Setup Command
Erase Command
Read Status
Command
I/O
0
=1 Error in Erase
DOh
70h
I/O 0
Busy
t
WB
t
BERS
I/O
0
=0 Successful Erase
Page(Row)
Address
t
WC
CE
CLE
I/O 0 ~ 7
WE
ALE
RE
90h
Read ID Command
Maker Code
Device Code
00h
ECh
Device
Code*
t
REA
Address. 1cycle
t
AR1
t
CLR
Device
Device Code*
K9F6408U0C
E6h
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