參數(shù)資料
型號： K9F6408U0C-T
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 8M x 8 Bit NAND Flash Memory
中文描述： 8米× 8位NAND閃存
文件頁數(shù)： 1/30頁
文件大小： 784K
代理商： K9F6408U0C-T
FLASH MEMORY
1
K9F6408U0C
8M x 8 Bit NAND Flash Memory
Revision History
Revision No.
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Remark
Advance
Preliminary
History
Initial issue.
1. I
OL
(R/B) of 1.8V device is changed.
-min. Value: 7mA -->3mA
-typ. Value: 8mA -->4mA
2. Package part number is modified.
K9F6408U0C-Y ---> K9F6408U0C_T
3. AC parameter is changed.
tRP(min.) : 30ns --> 25ns
1. TBGA package is changed.
- 9mmX11mm 63ball TBGA ---> 6mmX8.5mm 48ball TBGA
2. Part number(TBGA package part number) is changed
- K9F6408Q0C-D ----> K9F6408Q0C-B
- K9F6408U0C-D -----> K9F6408U0C-B
3. K9F6408U0C-BCB0,BIB0 products are added
1. WSOP1 package is added.
- Part number : K9F6408U0C_VCB0,VIBO
1. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 28)
2. Add the data protection Vcc guidence for 1.8V device - below about
1.1V. (Page 29)
The min. Vcc value 1.8V devices is changed.
K9F64XXQ0C : Vcc 1.65V~1.95V --> 1.70V~1.95V
Pb-free Package is added.
K9F6408U0C-QCB0,QIB0
K9F6408U0C-HCB0,HIB0
K9F6408Q0C-HCB0,HIB0
K9F6408U0C-FCB0,FIB0
Note is added.
(VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for
durations of 20 ns or less.)
1. Add the Protrusion/Burr value in WSOP1
PKG Diagram
.
1. PKG(WSOP1) Dimension Change
Draft Date
Jul. 24 . 2001
Nov. 5 . 2001
Nov. 12 . 2001
Mar. 13 . 2002
Nov. 21. 2002
Mar. 05. 2003
Mar. 13 . 2003
Jul. 04. 2003
Apr. 24. 2004
May. 24. 2004
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the
SAMSUNG branch office near you.
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F6408U0C-V 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory
K9F6408U0M-TCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory
K9F6408U0M-TIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory
K9F8008W0M- 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 8 bit NAND Flash Memory
K9F8008W0M-TCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 8 bit NAND Flash Memory
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