參數(shù)資料
型號(hào): K9F2808U0C-FCB0
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 16M x 8 Bit NAND Flash Memory
中文描述: 1,600 × 8位NAND閃存
文件頁(yè)數(shù): 31/31頁(yè)
文件大?。?/td> 774K
代理商: K9F2808U0C-FCB0
FLASH MEMORY
31
K9F2808U0C
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 2V. WP pin provides hardware protection and is recommended to be kept at V
IL
during power-up and power-down and recovery time of minimum 10
μ
s is required before internal circuit gets ready for any command
sequences as shown in Figure 15. The two step command sequence for program/erase provides additional software protection.
Figure 15. AC Waveforms for Power Transition
V
CC
WP
High
WE
Data Protection & Power up sequence
3.3V device : ~ 2.5V
3.3V device : ~ 2.5V
10
μ
s
相關(guān)PDF資料
PDF描述
K9F2808U0C-FIB0 16M x 8 Bit NAND Flash Memory
K9F2808Q0C-HIB0 16M x 8 Bit NAND Flash Memory
K9F2808U0C-HCB0 16M x 8 Bit NAND Flash Memory
K9F2808U0C-HIB0 16M x 8 Bit NAND Flash Memory
K9F2808U0C-XCB0 16M x 8 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F2808U0C-FIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
K9F2808U0C-HCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
K9F2808U0C-HIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
K9F2808U0C-P 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
K9F2808U0C-PCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory