- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374297 > K9F2808U0C-FCB0 (SAMSUNG SEMICONDUCTOR CO. LTD.) 16M x 8 Bit NAND Flash Memory PDF資料下載
參數(shù)資料
| 型號： | K9F2808U0C-FCB0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 16M x 8 Bit NAND Flash Memory |
| 中文描述： | 1,600 × 8位NAND閃存 |
| 文件頁數(shù)： | 27/31頁 |
| 文件大?。?/td> | 774K |
| 代理商： | K9F2808U0C-FCB0 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁當(dāng)前第27頁第28頁第29頁第30頁第31頁
FLASH MEMORY
27
K9F2808U0C
PAGE PROGRAM
The device is programmed basically on a page basis, but it does allow multiple partial page programing of a byte/word or consecutive
bytes/words up to 528, in a single page program cycle. The number of consecutive partial page programming operation within the
same page without an intervening erase operation should not exceed 2 for main array and 3 for spare array. The addressing may be
done in any random order in a block. A page program cycle consists of a serial data loading period in which up to 528 bytes
of data
may be loaded into the page register, followed by a non-volatile programming period where the loaded data is programmed into the
appropriate cell. About the pointer operation, please refer to the attached technical notes.
The serial data loading period begins by inputting the Serial Data Input command(80h), followed by the three cycle address input and
then serial data loading. The words other than those to be programmed do not need to be loaded.The Page Program confirm com-
mand(10h) initiates the programming process. Writing 10h alone without previously entering the serial data will not initiate the pro-
gramming process. The internal write controller automatically executes the algorithms and timings necessary for program and verify,
thereby freeing the system controller for other tasks. Once the program process starts, the Read Status Register command may be
entered, with RE and CE low, to read the status register. The system controller can detect the completion of a program cycle by mon-
itoring the R/B output, or the Status bit(I/O 6) of the Status Register. Only the Read Status command and Reset command are valid
while programming is in progress. When the Page Program is complete, the Write Status Bit(I/O 0) may be checked(Figure 10). The
internal write verify detects only errors for "1"s that are not successfully programmed to "0"s. The command register remains in Read
Status command mode until another valid command is written to the command register.
Figure 10. Program Operation
80h
R/B
Address & Data Input
I/O
0
Pass
10h
70h
Fail
t
PROG
I/Ox
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9F2808U0C-FIB0 | 16M x 8 Bit NAND Flash Memory |
| K9F2808Q0C-HIB0 | 16M x 8 Bit NAND Flash Memory |
| K9F2808U0C-HCB0 | 16M x 8 Bit NAND Flash Memory |
| K9F2808U0C-HIB0 | 16M x 8 Bit NAND Flash Memory |
| K9F2808U0C-XCB0 | 16M x 8 Bit NAND Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9F2808U0C-FIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
| K9F2808U0C-HCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
| K9F2808U0C-HIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
| K9F2808U0C-P | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
| K9F2808U0C-PCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。