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參數(shù)資料
| 型號： | K9F2808U0C-FCB0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 16M x 8 Bit NAND Flash Memory |
| 中文描述： | 1,600 × 8位NAND閃存 |
| 文件頁數(shù)： | 3/31頁 |
| 文件大小： | 774K |
| 代理商： | K9F2808U0C-FCB0 |
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FLASH MEMORY
3
K9F2808U0C
GENERAL DESCRIPTION
Offered in 16Mx8bit , the K9F2808U0C is 128M bit with spare 4M bit capacity. The device is offered in 3.3V Vcc. Its NAND cell pro-
vides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200
μ
s
on the 528-byte page and an erase operation can be performed in typical 2ms on a 16K-byte block. Data in the page can be read out
at 50ns cycle time per word. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip
write control automates all program and erase functions including pulse repetition, where required, and internal verification and mar-
gining of data. Even the write-intensive systems can take advantage of the K9F2808U0C’s extended reliability of 100K program/erase
cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm.
The K9F2808U0C is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable
applications requiring non-volatility.
FEATURES
Voltage Supply : 2.7 ~ 3.6 V
Organization
- Memory Cell Array
-(16M + 512K)bit x 8bit
- Data Register
- (512 + 16)bit x 8bit
Automatic Program and Erase
- Page Program
-(512 + 16)Byte
- Block Erase :
- (16K + 512)Byte
Page Read Operation
- Page Size
- (512 + 16)Byte
- Random Access : 10
μ
s(Max.)
- Serial Page Access : 50ns(Min.)
16M x 8 Bit NAND Flash Memory
Fast Write Cycle Time
- Program time : 200
μ
s(Typ.)
- Block Erase Time : 2ms(Typ.)
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
Command Register Operation
Unique ID for Copyright Protection
Package
- K9F2808U0C-YCB0/YIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F2808U0C-PCB0/PIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - Pb-free Package
- K9F2808U0C-VCB0/VIB0
48 - Pin WSOP I (12X17X0.7mm)
- K9F2808U0C-FCB0/FIB0
48 - Pin WSOP I (12X17X0.7mm) - Pb-free Package
* K9F2808U0C-V/F(WSOPI ) is the same device as
K9F2808U0C-Y/P(TSOP1) except package type.
PRODUCT LIST
Part Number
Vcc Range
Organization
PKG Type
K9F2808U0C-Y,P
2.7 ~ 3.6V
X8
TSOP1
K9F2808U0C-V,F
WSOP1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9F2808U0C-FIB0 | 16M x 8 Bit NAND Flash Memory |
| K9F2808Q0C-HIB0 | 16M x 8 Bit NAND Flash Memory |
| K9F2808U0C-HCB0 | 16M x 8 Bit NAND Flash Memory |
| K9F2808U0C-HIB0 | 16M x 8 Bit NAND Flash Memory |
| K9F2808U0C-XCB0 | 16M x 8 Bit NAND Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9F2808U0C-FIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
| K9F2808U0C-HCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
| K9F2808U0C-HIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
| K9F2808U0C-P | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
| K9F2808U0C-PCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
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