參數(shù)資料
型號(hào)： K9F1608W0A-TCB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： TV 128C 128#22D SKT RECP
中文描述： 200萬(wàn)× 8位NAND閃存
文件頁(yè)數(shù)： 7/25頁(yè)
文件大?。?/td> 443K
代理商： K9F1608W0A-TCB0
K9F1608W0A-TCB0, K9F1608W0A-TIB0
FLASH MEMORY
7
CAPACITANCE
(T
A
=25
°
C, Vcc=5.0V f=1.0MHz)
NOTE
: Capacitance is periodically sampled and not 100% tested.
Item
Symbol
Test Condition
Min
Max
Unit
Input/Output Capacitance
C
I/O
V
IL
=0V
-
10
pF
Input Capacitance
C
IN
V
IN
=0V
-
10
pF
VALID BLOCK
NOTE
:
1. The
K9F1608W0A
may include invalid blocks. Invalid blocks are defined as blocks that contain one or more bad bits. Do not try to access these
invalid blocks for program and erase. During its lifetime of 10 years and/or 1million program/erase cycles,the minimum number of valid blocks are
guaranteed though its initial number could be reduced. (Refer to the attached technical notes)
2. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block
Parameter
Symbol
Min
Typ.
Max
Unit
Valid Block Number
N
VB
502
508
512
Blocks
Program/Erase Characteristics
Parameter
Symbol
Min
Typ
Max
Unit
Program Time
t
PROG
-
0.25
1.5
ms
Number of Partial Program Cycles in the Same Page
Nop
-
-
10
cycles
Block Erase Time
t
BERS
-
2
10
ms
MODE SELECTION
NOTE
: 1. X can be V
IL
or V
IH
2. WP should be biased to CMOS high or CMOS low for standby.
CLE
ALE
CE
WE
RE
WP
Mode
H
L
L
H
X
Read Mode
Command Input
L
H
L
H
X
Address Input(3clock)
H
L
L
H
H
Write Mode
Command Input
L
H
L
H
H
Address Input(3clock)
L
L
L
H
H
Data Input
L
L
L
H
X
Sequential Read & Data Output
L
L
L
H
H
X
During Read(Busy)
X
X
X
X
X
H
During Program(Busy)
X
X
X
X
X
H
During Erase(Busy)
X
X
(1)
X
X
X
L
Write Protect
X
X
H
X
X
0V/V
CC
(2)
Stand-by
AC TEST CONDITION
(K9F1608W0A-TCB0:T
A
=0 to 70
°
C, K9F1608W0A-TIB0:T
A
=-40 to 85
°
C, V
CC
=2.7V ~ 5.5V unless otherwise noted)
Parameter
Value
Vcc=2.7V ~ 3.6V
Vcc=3.6V ~ 5.5V
Input Pulse Levels
0.4V to 2.4V
0.4V to 3.4V
Input Rise and Fall Times
5ns
Input and Output Timing Levels
0.8V and 2.0V
Output Load
1 TTL GATE and
1 TTL GATE and CL = 100pF
CL=50pF(3.0V+/-10%),100pF(3.0V~3.6V)
相關(guān)PDF資料
PDF描述
K9F1608W0A-TIB0 TV 37C 37#16 PIN RECP
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K9F1G16Q0M-YCB0 1Gb Gb 1.8V NAND Flash Errata
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F1608W0A-TIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 8 Bit NAND Flash Memory
K9F1G08B0C-PCB0T00 制造商:Samsung Semiconductor 功能描述:1GB SLC NORMAL X8 FBGA - Trays
K9F1G08D0M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9F1G08Q0A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
K9F1G08Q0M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
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