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參數(shù)資料
| 型號： | K9F1608W0A-TCB0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | TV 128C 128#22D SKT RECP |
| 中文描述： | 200萬× 8位NAND閃存 |
| 文件頁數(shù)： | 12/25頁 |
| 文件大小： | 443K |
| 代理商： | K9F1608W0A-TCB0 |
K9F1608W0A-TCB0, K9F1608W0A-TIB0
FLASH MEMORY
12
System Interface Using CE don’t-care.
CE
WE
t
WP
t
CH
t
CS
Start Add.(3Cycle)
80H
Data Input
CE
CLE
ALE
WE
I/O
0
~
7
Data Input
CE don’-care
≈
≈
10H
For a easier system interface, CE may be inactive during the data-loading or sequential data-reading as shown below. The internal
256byte page registers are utilized as seperate buffers for this operation and the system design gets more flexible. In addition, for
voice or audio applications which use slow cycle time on the order of u-seconds, de-activating CE during the data-loading and read-
ing would provide significant savings in power consumption.
Start Add.(3Cycle)
00H
CE
CLE
ALE
WE
I/O
0
~
7
Data Output(sequential)
CE don’-care
≈
R/B
t
R
RE
t
CEA
out
t
REA
(Max. 55ns)
CE
RE
I/O
0
~
7
Timing requirements : If CE is is exerted high during sequential
data-reading, the falling edge of CE to valid data(tCEA) must
be kept greater than 55ns.
Figure 3. Program Operation with CE don’t-care.
Figure 4. Read Operation with CE don’t-care.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9F1608W0A-TIB0 | TV 37C 37#16 PIN RECP |
| K9F1G08Q0A | FLASH MEMORY |
| K9F1G08U0A | FLASH MEMORY |
| K9F1G08Q0M-YIB0 | 1Gb Gb 1.8V NAND Flash Errata |
| K9F1G16Q0M-YCB0 | 1Gb Gb 1.8V NAND Flash Errata |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9F1608W0A-TIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 8 Bit NAND Flash Memory |
| K9F1G08B0C-PCB0T00 | 制造商:Samsung Semiconductor 功能描述:1GB SLC NORMAL X8 FBGA - Trays |
| K9F1G08D0M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
| K9F1G08Q0A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
| K9F1G08Q0M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
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