參數(shù)資料
型號(hào)： K9F1208Q0A-XXB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
元件分類： 圓形連接器
英文描述： Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVP00; No. of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
中文描述： 512Mb/256Mb 1.8 NAND閃存勘誤表
文件頁(yè)數(shù)： 39/45頁(yè)
文件大?。?/td> 807K
代理商： K9F1208Q0A-XXB0
K9F1216U0A-YCB0,YIB0,PCB0,PIB0
K9F1216U0A-DCB0,DIB0,HCB0,HIB0
FLASH MEMORY
38
K9F1208U0A-YCB0,YIB0,PCB0,PIB0
K9F1208U0A-DCB0,DIB0,HCB0,HIB0
K9F1208Q0A-DCB0,DIB0,HCB0,HIB0
K9F1216Q0A-DCB0,DIB0,HCB0,HIB0
K9F1208U0A-VCB0,VIB0,FCB0,FIB0
Multi-Plane Copy-Back Program
Multi-Plane Copy-Back Program is an extension of one page Copy-Back Program into four plane operation. Since the device is
equipped with four memory planes, activating the four sets of 528 bytes(x8 device) or 264words(x16 device)page registers enables a
simultaneous Multi-Plane Copy-Back programming of four pages. Partial activation of four planes is also permitted.
First, normal read operation with the "00h"command and address of the source page moves the whole 528 byte data into internal
page buffers. Any further read operation for transferring the addressed pages to the corresponding page register must be executed
with "03h" command instead of "00h" command. Any plane may be selected without regard to "00h" or "03h". Up to four planes may
be addressed. Data moved into the internal page registers are loaded into the destination plane addresses. After the input of com-
mand sequences for reading the source pages, the same procedure as Multi-Plane Page programming except for a replacement
address command with "8Ah" is executed. Since no programming process is involved during data loading at the destination plane
address , R/B remains in Busy state for a short period of time(tDBSY). Read Status command (standard 70h or alternate 71h) may
be issued to find out when the device returns to Ready state by polling the Ready/Busy status bit(I/O 6). After inputting data for the
last plane, actual True Page Program (10h) instead of dummy Page Program command (11h) must be followed to start the program-
ming process. The operation of R/B and Read Status is the same as that of Page Program. Since maximum four pages are pro-
grammed simultaneously, pass/fail status is available for each page when the program operation completes. No pointer operation is
supported with Multi-Plane Copy-Back Program.
Once the Multi-Plane Copy-Back Program is finished, any additional partial
page programming into the copied pages is prohibited before erase once the Multi-Plane Copy-Back Program is finished.
Figure 19. Four-Plane Copy-Back Program
8Ah
11h
8Ah
11h
8Ah
11h
8Ah
10h
Destination
Address
Input
Plane 0
(1024 Block)
Plane 1
(1024 Block)
Plane 2
(1024 Block)
Plane 3
(1024 Block)
Block 0
Block 4
Block 4092
Block 4088
Block 1
Block 5
Block 4093
Block 4089
Block 2
Block 6
Block 4094
Block 4090
Block 3
Block 7
Block 4095
Block 4091
00h
03h
03h
03h
Source
Address
Input
Plane 0
(1024 Block)
Plane 1
(1024 Block)
Plane 2
(1024 Block)
Plane 3
(1024 Block)
Block 4
Block 4092
Block 4088
Block 5
Block 4093
Block 2
Block 6
Block 4094
Block 4090
Block 3
Block 7
Block 4095
Block 4091
Block 0
Block 1
Block 4089
Max Three Times Repeatable
Max Three Times Repeatable
相關(guān)PDF資料
PDF描述
K9F1208UOM 64M x 8 Bit NAND Flash Memory(64M x 8位與非閃速存儲(chǔ)器)
K9F1608W0A- 2M x 8 Bit NAND Flash Memory
K9F1608W0A-TCB0 TV 128C 128#22D SKT RECP
K9F1608W0A-TIB0 TV 37C 37#16 PIN RECP
K9F1G08Q0A FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F1208Q0B 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9F1208Q0B-D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9F1208Q0B-F 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9F1208Q0B-H 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9F1208Q0B-P 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
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