參數(shù)資料
型號： K9F1208Q0A-XXB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
元件分類： 圓形連接器
英文描述： Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVP00; No. of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
中文描述： 512Mb/256Mb 1.8 NAND閃存勘誤表
文件頁數(shù)： 13/45頁
文件大小： 807K
代理商： K9F1208Q0A-XXB0
K9F1216U0A-YCB0,YIB0,PCB0,PIB0
K9F1216U0A-DCB0,DIB0,HCB0,HIB0
FLASH MEMORY
12
K9F1208U0A-YCB0,YIB0,PCB0,PIB0
K9F1208U0A-DCB0,DIB0,HCB0,HIB0
K9F1208Q0A-DCB0,DIB0,HCB0,HIB0
K9F1216Q0A-DCB0,DIB0,HCB0,HIB0
K9F1208U0A-VCB0,VIB0,FCB0,FIB0
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions otherwise noted.)
Parameter
Symbol
Test Conditions
K9F12XXQ0A(1.8V)
K9F12XXU0A(3.3V)
Unit
Min
Typ
Max
Min
Typ
Max
Operat-
ing
Current
Sequential Read
I
CC
1
tRC=50ns, CE=V
IL
I
OUT
=0mA
-
8
15
-
10
20
mA
Program
I
CC
2
-
-
8
15
-
10
20
Erase
I
CC
3
-
-
8
15
-
10
20
Stand-by Current(TTL)
I
SB
1
CE=V
IH
, WP=0V/V
CC
-
-
1
-
-
1
Stand-by Current(CMOS)
I
SB
2
CE=V
CC
-0.2, WP=0V/V
CC
-
10
50
-
10
50
μ
A
Input Leakage Current
I
LI
V
IN
=0 to Vcc(max)
-
-
±
10
-
-
±
10
Output Leakage Current
I
LO
V
OUT
=0 to Vcc(max)
-
-
±
10
-
-
±
10
Input High Voltage
V
IH
I/O pins
V
CCQ
-0.4
-
V
CCQ
+0.3
2.0
-
V
CCQ
+0.3
V
Except I/O pins
V
CC
-0.4
-
V
CC
+0.3
2.0
-
V
CC
+0.3
Input Low Voltage, All inputs
V
IL
-
-0.3
-
0.4
-0.3
-
0.8
Output High Voltage Level
V
OH
K9F12XXQ0A :I
OH
=-100
μ
A
K9F12XXU0A :I
OH
=-400
μ
A
V
CC
Q-0.1
-
-
2.4
-
-
Output Low Voltage Level
V
OL
K9F12XXQ0A :I
OL
=100uA
K9F12XXU0A :I
OL
=2.1mA
-
-
0.1
-
-
0.4
Output Low Current(R/B)
I
OL
(R/B)
K9F12XXQ0A :V
OL
=0.1V
K9F12XXU0A :V
OL
=0.4V
3
4
-
8
10
-
mA
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F12XXX0A-XCB0
:
T
A
=0 to 70
°
C, K9F12XXX0A-XIB0
:
T
A
=-40 to 85
°
C)
Parameter
Symbol
K9F12XXQ0A(1.8V)
K9F12XXU0A(3.3V)
Unit
Min
Typ.
Max
Min
Typ.
Max
Supply Voltage
V
CC
1.70
1.8
1.95
2.7
3.3
3.6
V
Supply Voltage
V
CCQ
1.70
1.8
1.95
2.7
3.3
3.6
V
Supply Voltage
V
SS
0
0
0
0
0
0
V
ABSOLUTE MAXIMUM RATINGS
NOTE
:
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is V
CC,
+0.3V which, during transitions, may overshoot to V
CC
+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
K9F12XXQ0A(1.8V)
K9F12XXU0A(3.3V)
Voltage on any pin relative to V
SS
V
IN/OUT
-0.6 to + 2.45
-0.6 to + 4.6
V
V
CC
-0.2 to + 2.45
-0.6 to + 4.6
V
CCQ
-0.2 to + 2.45
-0.6 to + 4.6
Temperature Under Bias
K9F12XXX0A-XCB0
T
BIAS
-10 to +125
°
C
K9F12XXX0A-XIB0
-40 to +125
Storage Temperature
K9F12XXX0A-XCB0
T
STG
-65 to +150
°
C
K9F12XXX0A-XIB0
Short Circuit Current
Ios
5
mA
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F1208Q0B 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9F1208Q0B-D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9F1208Q0B-F 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9F1208Q0B-H 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9F1208Q0B-P 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
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