參數(shù)資料
型號： K9F1208Q0A-XXB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
元件分類： 圓形連接器
英文描述： Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVP00; No. of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
中文描述： 512Mb/256Mb 1.8 NAND閃存勘誤表
文件頁數(shù)： 15/45頁
文件大小： 807K
代理商： K9F1208Q0A-XXB0
K9F1216U0A-YCB0,YIB0,PCB0,PIB0
K9F1216U0A-DCB0,DIB0,HCB0,HIB0
FLASH MEMORY
14
K9F1208U0A-YCB0,YIB0,PCB0,PIB0
K9F1208U0A-DCB0,DIB0,HCB0,HIB0
K9F1208Q0A-DCB0,DIB0,HCB0,HIB0
K9F1216Q0A-DCB0,DIB0,HCB0,HIB0
K9F1208U0A-VCB0,VIB0,FCB0,FIB0
AC Characteristics for Operation
NOTE
:
1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.
2. To break the sequential read cycle, CE must be held high for longer time than tCEH.
3. The time to Ready depends on the value of the pull-up resistor tied R/B pin.
Parameter
Symbol
Min
Max
Unit
Data Transfer from Cell to Register
t
R
-
12
μ
s
ALE to RE Delay
t
AR
10
-
ns
CLE to RE Delay
t
CLR
10
-
ns
Ready to RE Low
t
RR
20
-
ns
RE Pulse Width
t
RP
25
-
ns
WE High to Busy
t
WB
-
100
ns
Read Cycle Time
t
RC
50
-
ns
CE Access Time
t
CEA
-
45
ns
RE Access Time
t
REA
-
30
ns
RE High to Output Hi-Z
t
RHZ
-
30
ns
CE High to Output Hi-Z
t
CHZ
-
20
ns
RE or CE High to Output hold
t
OH
15
-
ns
RE High Hold Time
t
REH
15
-
ns
Output Hi-Z to RE Low
t
IR
0
-
ns
WE High to RE Low
t
WHR
60
-
ns
Device Resetting Time
(Read/Program/Erase)
t
RST
-
5/10/500
(1)
μ
s
K9F1208U0A-
Y,V,P,F only
Last RE High to Busy(at sequential read)
t
RB
-
100
ns
CE High to Ready(in case of interception by CE at read)
t
CRY
-
50 +tr(R/B)
(3)
ns
CE High Hold Time(at the last serial read)
(2)
t
CEH
100
-
ns
AC Timing Characteristics for Command / Address / Data Input
NOTE
:
1. If tCS is set less than 10ns, tWP must be minimum 35ns, otherwise, tWP may be minimum 25ns.
Parameter
Symbol
Min
Max
Unit
CLE Set-up Time
t
CLS
0
-
ns
CLE Hold Time
t
CLH
10
-
ns
CE Setup Time
t
CS
0
.-
ns
CE Hold Time
t
CH
10
-
ns
WE Pulse Width
t
WP
25
(1)
-
ns
ALE Setup Time
t
ALS
0
-
ns
ALE Hold Time
t
ALH
10
-
ns
Data Setup Time
t
DS
20
-
ns
Data Hold Time
t
DH
10
-
ns
Write Cycle Time
t
WC
45
-
ns
WE High Hold Time
t
WH
15
-
ns
相關(guān)PDF資料
PDF描述
K9F1208UOM 64M x 8 Bit NAND Flash Memory(64M x 8位與非閃速存儲器)
K9F1608W0A- 2M x 8 Bit NAND Flash Memory
K9F1608W0A-TCB0 TV 128C 128#22D SKT RECP
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F1208Q0B 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9F1208Q0B-D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9F1208Q0B-F 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9F1208Q0B-H 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9F1208Q0B-P 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
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