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參數(shù)資料
| 型號： | K7I321882M |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 元件分類： | DRAM |
| 英文描述： | 1Mx36 & 2Mx18 DDRII CIO b2 SRAM |
| 中文描述： | 1Mx36 |
| 文件頁數(shù)： | 1/17頁 |
| 文件大?。?/td> | 377K |
| 代理商： | K7I321882M |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
- 1 -
Rev 2.1
July. 2004
K7I323682M
K7I321882M
Document Title
1Mx36-bit, 2Mx18-bit DDRII CIO b2 SRAM
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Revision History
Rev. No.
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
1.0
2.0
2.1
Remark
Advance
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Final
Final
Final
History
1. Initial document.
1. Pin name change from DLL to Doff.
2. Vddq range change from 1.5V to 1.5V~1.8V.
3. Update JTAG test conditions.
4. Reserved pin for high density name change from NC to Vss/SA
5. Delete AC test condition about Clock Input timing Reference Level
6. Delete clock description on page 2 and add HSTL I/O comment
1. Update current characteristics in DC electrical characteristics
2. Change AC timing characteristics
3. Update JTAG instruction coding and diagrams
1. Add AC electrical characteristics.
2. Change AC timing characteristics.
3. Change DC electrical characteristics(ISB1)
1. Change the data Setup/Hold time.
2. Change the Access Time.(tCHQV, tCHQX, etc.)
3. Change the Clock Cycle Time.(MAX value of tKHKH)
4. Change the JTAG instruction coding.
1. Change the Boundary scan exit order.
2. Change the AC timing characteristics(-25, -20)
3. Correct the Overshoot and Undershoot timing diagrams.
1. Correct the JTAG ID register definition
2. Correct the AC timing parameter (delete the tKHKH Max value)
1. Change the Maximum Clock cycle time.
2. Correct the 165FBGA package ball size.
1. Change the operating current parameter.
before after
Icc(x36) -25 : 620 700
-20 : 520 600
-16 : 440 500
Icc(x18) -25 : 560 670
-20 : 470 570
-16 : 410 470
Icc(x 8 ) -25 : 540 650
-20 : 450 550
-16 : 390 450
Isb1 -25 : 200 230
-20 : 180 200
-16 : 160 190
1. Final spec release
1. Delete the x8 Org. part
1. Change the operating current parameter
before after
Isb1 -25 : 230 250
-20 : 200 230
-16 : 190 220
Draft Date
October, 22 2001
December, 12 2001
July, 29. 2002
Sep. 6. 2002
Oct. 7. 2002
Dec. 16, 2002
Mar. 20, 2003
April. 4, 2003
Oct. 29, 2003
Oct. 31, 2003
Dec. 1, 2003
July. 27, 2004
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