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參數(shù)資料
| 型號： | K7A323630C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1Mx36 and 2Mx18 Synchronous SRAM |
| 中文描述： | 1Mx36及2Mx18同步SRAM |
| 文件頁數(shù)： | 9/19頁 |
| 文件大?。?/td> | 437K |
| 代理商： | K7A323630C |
1Mx36 & 2Mx18 Synchronous SRAM
- 9 -
K7A321830C
K7A323630C
Preliminary
Rev. 0.2 April 2006
CAPACITANCE*
(T
A
=25
°
C, f=1MHz)
*Note
:
Sampled not 100% tested.
PARAMETER
SYMBOL
TEST CONDITION
MIN
MAX
UNIT
Input Capacitance
C
IN
V
IN
=0V
-
TBD
pF
Output Capacitance
C
OUT
V
OUT
=0V
-
TBD
pF
OPERATING CONDITIONS
Notes:
1. The above parameters are also guaranteed at industrial temperature range.
2. It should be V
DDQ
≤
V
DD
.
PARAMETER
SYMBOL
MIN
Typ.
MAX
UNIT
Supply Voltage
V
DD1
2.375
2.5
2.625
V
V
DDQ1
2.375
2.5
2.625
V
V
DD2
3.135
3.3
3.465
V
V
DDQ2
3.135
3.3
3.465
V
Ground
V
SS
0
0
0
V
ABSOLUTE MAXIMUM RATINGS*
*Note :
Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
PARAMETER
SYMBOL
RATING
UNIT
Voltage on V
DD
Supply Relative to V
SS
V
DD
-0.3 to 4.6
V
Voltage on V
DDQ
Supply Relative to V
SS
V
DDQ
V
DD
V
Voltage on Input Pin Relative to V
SS
V
IN
-0.3 to V
DD
+0.3
V
Voltage on I/O Pin Relative to V
SS
V
IO
-0.3 to V
DDQ
+0.3
V
Power Dissipation
P
D
1.6
W
Storage Temperature
T
STG
-65 to 150
°
C
Operating Temperature
Commercial
T
OPR
0 to 70
°
C
Industrial
T
OPR
-40 to 85
°
C
Storage Temperature Range Under Bias
T
BIAS
-10 to 85
°
C
V
DDQ
V
IL
V
DDQ
+1.0V
20% t
CYC
(MIN)
V
SS
V
IH
V
SS
-1.0V
20% t
CYC
(MIN)
Undershoot Timing
Overshoot Timing
V
DDQ
+0.5V
V
SS
-0.5V
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