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參數資料
| 型號： | K7A323630C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1Mx36 and 2Mx18 Synchronous SRAM |
| 中文描述： | 1Mx36及2Mx18同步SRAM |
| 文件頁數： | 10/19頁 |
| 文件大?。?/td> | 437K |
| 代理商： | K7A323630C |
1Mx36 & 2Mx18 Synchronous SRAM
- 10 -
K7A321830C
K7A323630C
Preliminary
Rev. 0.2 April 2006
TEST CONDITIONS
* The above parameters are also guaranteed at industrial temperature range.
PARAMETER
VALUE
0 to 3.0V
0 to 2.5V
1.0V/ns
1.5V
V
DDQ
/2
See Fig. 1
Input Pulse Level(for 3.3V I/O)
Input Pulse Level(for 2.5V I/O)
Input Rise and Fall Time(Measured at 20% to 80% for 3.3/2.5V I/O)
Input and Output Timing Reference Levels for 3.3V I/O
Input and Output Timing Reference Levels for 2.5V I/O
Output Load
DC ELECTRICAL CHARACTERISTICS
Notes :
1. The above parameters are also guaranteed at industrial temperature range.
2. Reference AC Operating Conditions and Characteristics for input and timing.
3. Data states are all zero.
4. In Case of I/O Pins, the Max. V
IH
=V
DDQ
+0.3V.
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
UNIT
NOTES
Input Leakage Current(except ZZ)
I
IL
V
DD
= Max ; V
IN
=V
SS
to V
DD
-2
+2
μ
A
Output Leakage Current
I
OL
Output Disabled, V
OUT
=V
SS
to V
DDQ
-2
+2
μ
A
Operating Current
I
CC
Device Selected, I
OUT
=0mA,
-20
-
TBD
mA
1,2
Standby Current
I
SB
Device deselected, I
OUT
=0mA,
ZZ
≤
V
IL
, f=Max,
All Inputs
≤
0.2V or
≥
V
DD
-0.2V
Device deselected, I
OUT
=0mA, ZZ
≤
0.2V,
f = 0, All Inputs=fixed (V
DD
-0.2V or 0.2V)
-20
-
TBD
mA
I
SB1
-
TBD
mA
I
SB2
Device deselected, I
OUT
=0mA, ZZ
≥
V
DD
-0.2V,
f=Max, All Inputs
≤
V
IL
or
≥
V
IH
-
TBD
mA
Output Low Voltage(3.3V I/O)
V
OL
I
OL
=8.0mA
-
0.4
V
Output High Voltage(3.3V I/O)
V
OH
I
OH
=-4.0mA
2.4
-
V
Output Low Voltage(2.5V I/O)
V
OL
I
OL
=1.0mA
-
0.4
V
Output High Voltage(2.5V I/O)
V
OH
I
OH
=-1.0mA
2.0
-
V
Input Low Voltage(3.3V I/O)
V
IL
-0.3*
0.8
V
nput High Voltage(3.3V I/O)
V
IH
2.0
V
DD
+0.3**
V
3
Input Low Voltage(2.5V I/O)
V
IL
-0.3*
0.7
V
Input High Voltage(2.5V I/O)
V
IH
1.7
V
DD
+0.3**
V
3
Output Load(B),
(for t
LZC
, t
LZOE
, t
HZOE
& t
HZC
)
Dout
353
/
1538
5pF*
+3.3V for 3.3V I/O
/+2.5V for 2.5V I/O
319
/
1667
Fig. 1
* Including Scope and Jig Capacitance
Output Load(A)
Dout
Zo=50
RL=50
VL=1.5V for 3.3V I/O
V
DDQ
/2 for 2.5V I/O
30pF*
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| K7A323630C-QC20 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx36 and 2Mx18 Synchronous SRAM |
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