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| 型號： | K6R4008V1D-JC |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges |
| 中文描述： | 1Mx4位高速靜態(tài)RAM（3.3V的）。在商用和工業(yè)溫度范圍運營 |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 239K |
| 代理商： | K6R4008V1D-JC |
K6R4008V1D
CMOS SRAM
PRELIMINARY
Rev. 2.0
July 2004
- 5 -
RECOMMENDED DC OPERATING CONDITIONS*
(T
A
=0 to 70
°
C)
* The above parameters are also guaranteed at industrial temperature range.
** V
IL
(Min) = -2.0V a.c(Pulse Width
≤
8ns) for I
≤
20mA.
*** V
IH
(Max) = V
CC
+ 2.0V a.c (Pulse Width
≤
8ns) for I
≤
20mA
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
V
CC
3.0
3.3
3.6
V
Ground
V
SS
0
0
0
V
Input High Voltage
V
IH
2.0
-
V
CC
+0.3***
V
Input Low Voltage
V
IL
-0.3**
-
0.8
V
CAPACITANCE*
(T
A
=25
°
C, f=1.0MHz)
* Capacitance is sampled and not 100% tested.
Item
Symbol
Test Conditions
TYP
Max
Unit
Input/Output Capacitance
C
I/O
V
I/O
=0V
-
8
pF
Input Capacitance
C
IN
V
IN
=0V
-
6
pF
DC AND OPERATING CHARACTERISTICS*
(T
A
=0 to 70
°
C, Vcc=3.3
±
0.3V, unless otherwise specified)
* The above parameters are also guaranteed at industrial temperature range.
Parameter
Symbol
Test Conditions
Min
Max
Unit
Input Leakage Current
I
LI
V
IN
=V
SS
to
V
CC
-2
2
μ
A
μ
A
Output Leakage Current
I
LO
CS=V
IH
or OE=V
IH
or WE=V
IL
V
OUT
=V
SS
to
V
CC
-2
2
Operating Current
I
CC
Min. Cycle, 100% Duty
CS=V
IL,
V
IN
=V
IH
or
V
IL,
I
OUT
=0mA
Com.
8ns
-
80
mA
10ns
-
65
Ind.
8ns
-
90
10ns
-
75
Standby Current
I
SB
Min. Cycle, CS=V
IH
-
20
mA
I
SB1
f=0MHz, CS
≥
V
CC
-0.2V,
V
IN
≥
V
CC
-0.2V or V
IN
≤
0.2V
-
5
Output Low Voltage Level
V
OL
I
OL
=8mA
-
0.4
V
Output High Voltage Level
V
OH
I
OH
=-4mA
2.4
-
V
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