參數(shù)資料
型號(hào): K6R4008V1D-JC
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges
中文描述: 1Mx4位高速靜態(tài)RAM(3.3V的)。在商用和工業(yè)溫度范圍運(yùn)營
文件頁數(shù): 3/10頁
文件大小: 239K
代理商: K6R4008V1D-JC
K6R4008V1D
CMOS SRAM
PRELIMINARY
Rev. 2.0
July 2004
- 3 -
512K x 8 Bit High-Speed CMOS Static RAM
GENERAL DESCRIPTION
The K6R4008V1D is a 4,194,304-bit high-speed Static Random
Access Memory organized as 524,288 words by 8 bits. The
K6R4008V1D uses 8 common input and output lines and has an
output enable pin which operates faster than address access
time at read cycle. The device is fabricated using SAMSUNG
s
advanced CMOS process and designed for high-speed circuit
technology. It is particularly well suited for use in high-density
high-speed system applications. The K6R4008V1D is packaged
in a 400 mil 36-pin plastic SOJ and 44-pin plastic TSOP type II.
FEATURES
Fast Access Time 8,10ns(Max.)
Low Power Dissipation
Standby (TTL) : 20mA(Max.)
(CMOS) : 5mA(Max.)
Operating K6R4008V1D-08 : 80mA(Max.)
K6R4008V1D-10 : 65mA(Max.)
Single 3.3
±
0.3V Power Supply
TTL Compatible Inputs and Outputs
Fully Static Operation
- No Clock or Refresh required
Three State Outputs
Center Power/Ground Pin Configuration
Standard Pin Configuration
K6R4008V1D-J : 36-SOJ-400
K6R4008V1D-K : 36-SOJ-400(Lead-Free)
K6R4008V1D-T : 44-TSOP2-400BF
K6R4008V1D-U : 44-TSOP2-400BF(Lead-Free)
Operating in Commercial and Industrial Temperature range.
Clk Gen.
I/O
1
~I/O
8
CS
WE
OE
FUNCTIONAL BLOCK DIAGRAM
R
Data
Cont.
Column Select
CLK
Gen.
Pre-Charge Circuit
Memory Array
1024 Rows
512 x 8 Columns
I/O Circuit
A
10
A
11
A
12
A
13
A
14
A
15
A
16
A
17
A
18
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K6R4008V1D-JC08 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
K6R4008V1D-JC08000 制造商:Samsung Semiconductor 功能描述:SRAM Chip Async Single 3.3V 4M-Bit 512K x 8 8ns 36-Pin SOJ Tube
K6R4008V1D-JC10 制造商:Samsung Electro-Mechanics 功能描述:512K X 8 STANDARD SRAM, 10 ns, PDSO36
K6R4008V1D-JC10T00 制造商:Samsung Semiconductor 功能描述:SRAM Chip Async Single 3.3V 4M-Bit 512K x 8 10ns 36-Pin SOJ T/R
K6R4008V1D-JI08 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.