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參數(shù)資料
| 型號： | K6R1016C1C-I10 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating). |
| 中文描述： | 64Kx16位高速CMOS靜態(tài)RAM（5.0V操作）。 |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 190K |
| 代理商： | K6R1016C1C-I10 |
K6R1016C1C-C/C-L, K6R1016C1C-I/C-P
CMOS SRAM
Revision 4.0
September 2001
- 4 -
TEST CONDITIONS*
* The above test conditions are also applied at industrial temperature range.
Parameter
Value
Input Pulse Levels
0V to 3V
Input Rise and Fall Times
3ns
Input and Output timing Reference Levels
1.5V
Output Loads
See below
AC CHARACTERISTICS
(T
A
=0 to 70
°
C, V
CC
=5.0V
±
10%, unless otherwise noted.)
Output Loads(B)
for t
HZ
, t
LZ
, t
WHZ
, t
OW
, t
OLZ
& t
OHZ
D
OUT
5pF*
480
255
+5.0V
* Including Scope and Jig Capacitance
Output Loads(A)
D
OUT
R
L
= 50
Z
O
= 50
V
L
= 1.5V
30pF*
* Capacitive Load consists of all components of the
test environment.
CAPACITANCE*
(T
A
=25
°
C, f=1.0MHz)
* Capacitance is sampled and not 100% tested.
Item
Symbol
Test Conditions
MIN
Max
Unit
Input/Output Capacitance
C
I/O
V
I/O
=0V
-
8
pF
Input Capacitance
C
IN
V
IN
=0V
-
6
pF
DC AND OPERATING CHARACTERISTICS*
(T
A
=0 to 70
°
C, Vcc=5.0V
±
10%, unless otherwise specified)
* The above parameters are also guaranteed at industrial temperature range.
** V
CC
=5.0V
±
5%, Temp.=25
°
C
Parameter
Symbol
Test Conditions
Min
Max
Unit
Input Leakage Current
I
LI
V
IN
=V
SS
to
V
CC
-2
2
μ
A
Output Leakage Current
I
LO
CS=V
IH
or OE=V
IH
or WE=V
IL
V
OUT
=V
SS
to
V
CC
-2
2
μ
A
Operating Current
I
CC
Min. Cycle, 100% Duty
CS=V
IL,
V
IN
= V
IH
or
V
IL,
I
OUT
=0mA
10ns
-
105
mA
12ns
-
95
15ns
-
93
Standby Current
I
SB
Min. Cycle, CS=V
IH
-
30
mA
I
SB1
f=0MHz, CS
≥
V
CC
-0.2V,
V
IN
≥
V
CC
-0.2V or V
IN
≤
0.2V
Normal
-
5
mA
L-Ver.
-
0.5
Output Low Voltage Level
V
OL
I
OL
=8mA
-
0.4
V
Output High Voltage Level
V
OH
I
OH
=-4mA
2.4
-
V
V
OH1
**
I
OH1
=-0.1mA
-
3.95
V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6R1016C1C-I12 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1016C1C-I15 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1016C1CJC12 | 制造商:Samsung Semiconductor 功能描述: |
| K6R1016C1CTC12 | 制造商: 功能描述: 制造商:undefined 功能描述: |
| K6R1016C1C-TC12 | 制造商:Samsung Semiconductor 功能描述: |
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