參數(shù)資料
型號: K6R1016C1C-I10
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating).
中文描述: 64Kx16位高速CMOS靜態(tài)RAM(5.0V操作)。
文件頁數(shù): 3/11頁
文件大?。?/td> 190K
代理商: K6R1016C1C-I10
K6R1016C1C-C/C-L, K6R1016C1C-I/C-P
CMOS SRAM
Revision 4.0
September 2001
- 3 -
ABSOLUTE MAXIMUM RATINGS*
*
Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
Voltage on Any Pin Relative to V
SS
V
IN
,
V
OUT
-0.5 to V
CC
+0.5
V
Voltage on V
CC
Supply Relative to V
SS
V
CC
-0.5 to 7.0
V
Power Dissipation
P
d
1
W
Storage Temperature
T
STG
-65 to 150
°
C
°
C
°
C
Operating Temperature
Commercial
T
A
0 to 70
Industrial
T
A
-40 to 85
RECOMMENDED DC OPERATING CONDITIONS*
(TA= to 70
°
C)
* The above parameters are also guaranteed at industrial temperature range.
**
V
IL
(Min) = -2.0V a.c(Pulse Width
8ns) for I
20mA.
***
V
IH
(Max) = V
CC +
2.0V a.c(Pulse Width
8ns) for I
20mA.
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
V
CC
4.5
5.0
5.5
V
Ground
V
SS
0
0
0
V
Input High Voltage
V
IH
2.2
-
V
CC
+0.5***
V
Input Low Voltage
V
IL
-0.5**
-
0.8
V
LB
OE
A0
A1
A2
N.C
I/O1
UB
A3
A4
CS
I/O9
I/O2
I/O3
A5
A6
I/O11
I/O10
Vss
I/O4
N.C
A7
I/O12
Vcc
Vcc
I/O5
N.C
N.C
I/O13
Vss
I/O7
I/O6
A14
A15
I/O14
I/O15
I/O8
N.C
A12
A13
WE
I/O16
N.C
A8
A9
A10
A11
N.C
1
2
3
4
5
6
A
B
C
D
E
F
G
H
48-CSP
PIN CONFIGURATION
(TOP VIEW)
SOJ/
TSOP2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
A
15
A
14
A
13
OE
UB
LB
I/O
16
I/O
15
I/O
14
I/O
13
Vss
Vcc
I/O
12
I/O
11
I/O
10
I/O
9
N.C
A
12
A
11
A
10
A
9
N.C
A
0
A
1
A
2
A
3
A
4
CS
I/O
1
I/O
2
I/O
3
I/O
4
Vcc
Vss
I/O
5
I/O
6
I/O
7
I/O
8
WE
A
5
A
6
A
7
A
8
N.C
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
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