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參數(shù)資料
| 型號： | K6R1016C1C-I15 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating). |
| 中文描述： | 64Kx16位高速CMOS靜態(tài)RAM（5.0V操作）。 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大小： | 190K |
| 代理商： | K6R1016C1C-I15 |
K6R1016C1C-C/C-L, K6R1016C1C-I/C-P
Document Title
64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating).
Operated at Commercial and Industrial Temperature Ranges.
Revision History
CMOS SRAM
Revision 4.0
September 2001
- 1 -
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions,
please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Rev. No.
Rev. 0.0
Rev. 1.0
Rev. 2.0
Rev. 2.1
Rev. 2.2
Rev. 3.0
Rev. 3.1
Rev. 4.0
Remark
Preliminary
Preliminary
Preliminary
Final
Final
Final
Final
Final
History
Initial release with preliminary.
Relax DC characteristics.
Add 48-fine pitch BGA.
Changed device part name for FP-BGA.
Item
Symbol
ex) K6R1016C1C-Z -> K6R1016C1C-F
Changed device ball name for FP-BGA.
Previous
I/O1 ~ I/O8
I/O9 ~ I/O16
Added Data Retention Characteristics.
Add 10ns part.
Delete 20ns speed bin
Item
Previous
90mA
88mA
85mA
Changed
95mA
93mA
90mA
I
CC
12ns
15ns
20ns
Previous
Z
Changed
F
Changed
I/O9 ~ I/O16
I/O1 ~ I/O8
Draft Data
Aug. 5. 1998
Sep. 7. 1998
Sep. 17. 1998
Nov. 5. 1998
Dec. 10. 1998
Mar. 3. 1999
Mar. 3. 2000
Sep.24. 2001
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6R1016C1CJC12 | 制造商:Samsung Semiconductor 功能描述: |
| K6R1016C1CTC12 | 制造商: 功能描述: 制造商:undefined 功能描述: |
| K6R1016C1C-TC12 | 制造商:Samsung Semiconductor 功能描述: |
| K6R1016C1C-TI10000 | 制造商:Samsung SDI 功能描述: |
| K6R1016C1D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
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