參數(shù)資料
型號(hào)： K6R1008C1C-T12
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges.
中文描述： 128Kx8位高速CMOS靜態(tài)RAM（5V的工作）。在經(jīng)營商業(yè)和工業(yè)溫度范圍。
文件頁數(shù)： 4/8頁
文件大?。?/td> 168K
代理商： K6R1008C1C-T12
K6R1008C1A-C, K6R1008C1A-I
CMOS SRAM
PRELIMINARY
Rev 4.0
- 4 -
February 1998
TEST CONDITIONS*
* The above test conditions are also applied at industrial temperature range.
Parameter
Value
Input Pulse Levels
0V to 3V
Input Rise and Fall Times
3ns
Input and Output timing Reference Levels
1.5V
Output Loads
See below
AC CHARACTERISTICS
(T
A
=0 to 70
°
C, V
CC
=5.0V
±
10%, unless otherwise noted.)
READ CYCLE*
* The above parameters are also guaranteed at industrial temperature range
.
Parameter
Symbol
K6R1008C1A-12
K6R1008C1A-15
K6R1008C1A-20
Unit
Min
Max
Min
Max
Min
Max
Read Cycle Time
t
RC
12
-
15
-
20
-
ns
Address Access Time
t
AA
-
12
-
15
-
20
ns
Chip Select to Output
t
CO
-
12
-
15
-
20
ns
Output Enable to Valid Output
t
OE
-
6
-
7
-
9
ns
Chip Enable to Low-Z Output
t
LZ
3
-
3
-
3
-
ns
Output Enable to Low-Z Output
t
OLZ
0
-
0
-
0
-
ns
Chip Disable to High-Z Output
t
HZ
0
6
0
7
0
9
ns
Output Disable to High-Z Output
t
OHZ
0
6
0
7
0
9
ns
Output Hold from Address Change
t
OH
3
-
3
-
3
-
ns
Chip Selection to Power Up Time
t
PU
0
-
0
-
0
-
ns
Chip Selection to Power DownTime
t
PD
-
12
-
15
-
20
ns
Output Loads(A)
Output Loads(B)
for t
HZ
, t
LZ
, t
WHZ
, t
OW
, t
OLZ
& t
OHZ
D
OUT
5pF*
480
255
+5.0V
D
OUT
30pF*
480
255
+5.0V
* Including Scope and Jig Capacitance
相關(guān)PDF資料
PDF描述
K6R1008C1D-JC10 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
K6R1008C1D-TC10 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
K6R1008C1C-T15 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges.
K6R1008C1D-UI10 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
K6R1008C1D-TI10 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K6R1008C1C-T15 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges.
K6R1008C1C-TC12000 制造商:Samsung SDI 功能描述:SRAM Chip Async Single 5V 1M-Bit 128K x 8 12ns 32-Pin TSOP-II 制造商:Samsung Semiconductor 功能描述:SRAM Chip Async Single 5V 1M-Bit 128K x 8 12ns 32-Pin TSOP-II
K6R1008C1D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
K6R1008C1D-J(T)C(I)10 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
K6R1008C1D-J(T)C(I)12 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
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