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參數(shù)資料
| 型號： | K6R1008C1D-UI10 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 元件分類： | DRAM |
| 英文描述： | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| 中文描述： | 256Kx4位（與OE）的高速CMOS靜態(tài)RAM（5.0V操作）。 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 168K |
| 代理商： | K6R1008C1D-UI10 |
K6R1008C1A-C, K6R1008C1A-I
CMOS SRAM
PRELIMINARY
Rev 4.0
- 1 -
February 1998
Document Title
128Kx8 High Speed Static RAM(5V Operating), Revolutionary Pin out.
Operated at Commercial and Industrial Temperature Ranges.
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Rev. No.
Rev. 0.0
Rev. 1.0
Rev. 2.0
Rev. 3.0
Rev. 4.0
Remark
Preliminary
Final
Final
Final
Final
History
Initial release with Preliminary.
Release to final Data Sheet.
1.1. Delete Preliminary
Update D.C parameters.
2.1. Update D.C parameters
Add Industrial Temperature Range parts and 300mil-SOJ PKG.
3.1. Add 32-Pin 300mil-SOJ Package.
3.2. Add Industrial Temperature Range parts with the same parame-
ters as Commercial Temperature Range parts.
3.2.1. Add K6R1008C1A parts for Industrial Temperature Range.
3.2.2. Add ordering information.
3.2.3. Add the condition for operating at Industrial Temp. Range.
3.3. Add the test condition for V
OH1
with V
CC
=5V
±
5% at 25
°
C
3.4. Add timing diagram to define t
WP
as
″(
Timing Wave Form of
Write Cycle(CS=Controlled)
″
4.1. Delete 17ns Part
I
TEMS
Previous spec.
(12/15/17/20ns part)
200/190/180/170mA
30mA
10mA
Updated spec.
(12/15/17/20ns part)
170/165/165/160mA
25mA
8mA
I
CC
I
SB
I
SB1
Draft Data
Apr. 22th, 1995
Feb. 29th, 1996
Jul. 16th, 1996
Jun. 2nd, 1997
Feb. 25th, 1998
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6R1008V1B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges |
| K6R1008V1B-B-L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges |
| K6R1008V1B-B-P | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges |
| K6R1008V1B-C10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges |
| K6R1008V1B-C12 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges |
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