參數資料
型號： K6R1008C1C-T10
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： RES-140 0.0625W 1% THICK FILM
中文描述： 128Kx8位高速CMOS靜態(tài)RAM（5V的工作）。在經營商業(yè)和工業(yè)溫度范圍。
文件頁數： 6/8頁
文件大小： 168K
代理商： K6R1008C1C-T10
K6R1008C1A-C, K6R1008C1A-I
CMOS SRAM
PRELIMINARY
Rev 4.0
- 6 -
February 1998
NOTES
(READ CYCLE)
1. WE is high for read cycle.
2. All read cycle timing is referenced from the last valid address to the first transition address.
3. t
HZ
and t
OHZ
are defined as the time at which the outputs achieve the open circuit condition and are not referenced to V
OH
or
V
OL
levels.
4. At any given temperature and voltage condition, t
HZ
(Max.) is less than t
LZ
(Min.) both for a given device and from device to
device.
5. Transition is measured
±
200mV from steady state voltage with Load(B). This parameter is sampled and not 100% tested.
6. Device is continuously selected with CS=V
IL.
7. Address valid prior to coincident with CS transition low.
8. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycle.
TIMING WAVEFORM OF WRITE CYCLE(1)
(OE= Clock)
Address
CS
t
WP(2)
t
DW
t
DH
Valid Data
WE
Data in
Data out
t
WC
t
WR(5)
t
AW
t
CW(3)
High-Z(8)
High-Z
OE
t
OHZ(6)
t
AS(4)
TIMING WAVEFORM OF WRITE CYCLE(2)
(OE=Low Fixed)
Address
CS
t
WP1(2)
t
DW
t
DH
t
OW
t
WHZ(6)
Valid Data
WE
Data in
Data out
t
WC
t
AS(4)
t
WR(5)
t
AW
t
CW(3)
(10)
(9)
High-Z(8)
High-Z
相關PDF資料
PDF描述
K6R1008C1C-T12 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges.
K6R1008C1D-JC10 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
K6R1008C1D-TC10 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
K6R1008C1C-T15 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges.
K6R1008C1D-UI10 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
相關代理商/技術參數
參數描述
K6R1008C1C-T12 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges.
K6R1008C1C-T15 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges.
K6R1008C1C-TC12000 制造商:Samsung SDI 功能描述:SRAM Chip Async Single 5V 1M-Bit 128K x 8 12ns 32-Pin TSOP-II 制造商:Samsung Semiconductor 功能描述:SRAM Chip Async Single 5V 1M-Bit 128K x 8 12ns 32-Pin TSOP-II
K6R1008C1D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
K6R1008C1D-J(T)C(I)10 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
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