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參數(shù)資料
| 型號(hào)： | K6R1008C1C-T10 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | RES-140 0.0625W 1% THICK FILM |
| 中文描述： | 128Kx8位高速CMOS靜態(tài)RAM（5V的工作）。在經(jīng)營(yíng)商業(yè)和工業(yè)溫度范圍。 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 168K |
| 代理商： | K6R1008C1C-T10 |
K6R1008C1A-C, K6R1008C1A-I
CMOS SRAM
PRELIMINARY
Rev 4.0
- 2 -
February 1998
128K x 8 Bit High-Speed CMOS Static RAM
GENERAL DESCRIPTION
The K6R1008C1A is a 1,048,576-bit high-speed Static Random
Access Memory organized as 131,072 words by 8 bits. The
K6R1008C1A uses 8 common input and output lines and has
an output enable pin which operates faster than address access
time at read cycle. The device is fabricated using SAMSUNG
′
s
advanced CMOS process and designed for high-speed circuit
technology. It is particularly well suited for use in high-density
high-speed system applications. The K6R1008C1A is packaged
in a 400mil 32-pin plastic SOJ or TSOP2 forward.
FEATURES
Fast Access Time 12, 15, 20ns(Max.)
Low Power Dissipation
Standby (TTL) : 25mA(Max.)
(CMOS) : 8mA(Max.)
Operating K6R1008C1A-12 : 170mA(Max.)
K6R1008C1A-15 : 165mA(Max.)
K6R1008C1A-20 : 160mA(Max.)
Single 5.0V
±
10% Power Supply
TTL Compatible Inputs and Outputs
I/O Compatible with 3.3V Device
Fully Static Operation
- No Clock or Refresh required
Three State Outputs
Center Power/Ground Pin Configuration
Standard Pin Configuration
K6R1008C1A-J : 32-SOJ-400
K6R1008C1A-T: 32-TSOP2-400CF
K6R1008C1A-C12/C15/C20
Commercial Temp.
K6R1008C1A-I12/I15/I20
Industrial Temp.
ORDERING INFORMATION
Clk Gen.
I/O
1
~I/O
8
CS
WE
OE
FUNCTIONAL BLOCK DIAGRAM
R
Data
Cont.
Column Select
A
9
A
10
A
11
A
12
A
13
A
14
A
15
A
16
CLK
Gen.
Pre-Charge Circuit
Memory Array
512 Rows
256x8 Columns
I/O Circuit
PIN FUNCTION
Pin Name
Pin Function
A
0
- A
16
Address Inputs
WE
Write Enable
CS
Chip Select
OE
Output Enable
I/O
1
~ I/O
8
Data Inputs/Outputs
V
CC
Power(+5.0V)
V
SS
Ground
PIN CONFIGURATION
(Top View)
SOJ/
TSOP2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A
16
A
15
A
14
A
13
OE
I/O
8
I/O
7
Vss
Vcc
I/O
6
I/O
5
A
12
A
11
A
10
A
9
A
8
A
0
A
1
A
2
A
3
CS
I/O
1
I/O
2
Vcc
Vss
I/O
3
I/O
4
WE
A
4
A
5
A
6
A
7
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K6R1008C1C-T12 | 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. |
| K6R1008C1D-JC10 | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1008C1D-TC10 | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1008C1C-T15 | 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. |
| K6R1008C1D-UI10 | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6R1008C1C-T12 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. |
| K6R1008C1C-T15 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. |
| K6R1008C1C-TC12000 | 制造商:Samsung SDI 功能描述:SRAM Chip Async Single 5V 1M-Bit 128K x 8 12ns 32-Pin TSOP-II 制造商:Samsung Semiconductor 功能描述:SRAM Chip Async Single 5V 1M-Bit 128K x 8 12ns 32-Pin TSOP-II |
| K6R1008C1D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| K6R1008C1D-J(T)C(I)10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
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