參數(shù)資料
型號(hào): K6R1004V1D
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
中文描述: 64Kx16位高速CMOS靜態(tài)RAM(3.3V的)在商業(yè)和工業(yè)溫度范圍操作。
文件頁(yè)數(shù): 6/9頁(yè)
文件大?。?/td> 192K
代理商: K6R1004V1D
PRELIMINARY
PRELIMINARY
CMOS SRAM
Rev. 3.0
July 2004
- 6 -
K6R1004V1D
Address
Data Out
Previous Valid Data
Valid Data
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1)
(Address Controlled
,
CS=OE=V
IL
, WE=V
IH
)
t
AA
t
RC
t
OH
TIMING WAVEFORM OF READ CYCLE(2)
(WE=V
IH
)
WRITE CYCLE*
* The above parameters are also guaranteed at industrial temperature range.
Parameter
Symbol
K6R1004V1D-08
K6R1004V1D-10
Unit
Min
Max
Min
Max
Write Cycle Time
t
WC
8
-
10
-
ns
Chip Select to End of Write
t
CW
6
-
7
-
ns
Address Set-up Time
t
AS
0
-
0
-
ns
Address Valid to End of Write
t
AW
6
-
7
-
ns
Write Pulse Width(OE High)
t
WP
6
-
7
-
ns
Write Pulse Width(OE Low)
t
WP1
8
-
10
-
ns
Write Recovery Time
t
WR
0
-
0
-
ns
Write to Output High-Z
t
WHZ
0
4
0
5
ns
Data to Write Time Overlap
t
DW
4
-
5
-
ns
Data Hold from Write Time
t
DH
0
-
0
-
ns
End of Write to Output Low-Z
t
OW
3
-
3
-
ns
Valid Data
High-Z
t
RC
CS
Address
OE
Data out
t
HZ(3,4,5)
t
AA
t
CO
t
OE
t
OLZ
t
LZ(4,5)
t
OHZ
t
PU
t
PD
50%
50%
V
CC
Current
I
CC
I
SB
t
DH
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