參數(shù)資料
型號: K6R1004V1D
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
中文描述: 64Kx16位高速CMOS靜態(tài)RAM(3.3V的)在商業(yè)和工業(yè)溫度范圍操作。
文件頁數(shù): 1/9頁
文件大?。?/td> 192K
代理商: K6R1004V1D
PRELIMINARY
PRELIMINARY
CMOS SRAM
Rev. 3.0
July 2004
- 1 -
K6R1004V1D
Document Title
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating)
Operated at Commercial and Industrial Temperature Ranges.
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Rev. No.
Rev. 0.0
Rev. 0.1
Rev. 0.2
Rev. 1.0
Rev. 2.0
Rev. 3.0
Remark
Preliminary
Preliminary
Preliminary
Final
Final
Final
History
Initial document.
Speed bin modify
Current modify
1. Final datasheet release
2. Delete 12ns speed bin.
3. Change Icc for Industrial mode.
Item
1. Delete UB,LB releated timing diagram.
1. Add the Lead Free Package type.
Previous
100mA
85mA
Current
90mA
75mA
I
CC(Industrial)
8ns
10ns
Draft Data
May. 11. 2001
June. 18. 2001
September. 9. 2001
December. 18. 2001
June. 19. 2002
July. 26, 2004
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