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參數(shù)資料
| 型號(hào)： | K6R1004V1D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| 中文描述： | 64Kx16位高速CMOS靜態(tài)RAM（3.3V的）在商業(yè)和工業(yè)溫度范圍操作。 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 192K |
| 代理商： | K6R1004V1D |
PRELIMINARY
PRELIMINARY
CMOS SRAM
Rev. 3.0
July 2004
- 3 -
K6R1004V1D
256K x 4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating)
FEATURES
Fast Access Time 8,10ns(Max.)
Low Power Dissipation
Standby (TTL) : 20mA(Max.)
(CMOS) : 5mA(Max.)
Operating K6R1004V1D-08: 80mA(Max.)
K6R1004V1D-10: 65mA(Max.)
Single 3.3
±
0.3V Power Supply
TTL Compatible Inputs and Outputs
Fully Static Operation
- No Clock or Refresh required
Three State Outputs
Center Power/Ground Pin Configuration
Standard Pin Configuration :
K6R1004V1D-J : 32-SOJ-400
K6R1004V1D-K : 32-SOJ-400 (Lead-Free)
Operating in Commercial and Industrial Temperature range.
GENERAL DESCRIPTION
The K6R1004V1D is a 1,048,576-bit high-speed Static Random
Access Memory organized as 262,144 words by 4 bits.
The K6R1004V1D uses 4 common input and output lines and
has an output enable pin which operates faster than address
access time at read cycle. The device is fabricated using
SAMSUNG
′
s advanced CMOS process and designed for
high-speed circuit technology. It is particularly well suited for
use in high-density high-speed system applications. The
K6R1004V1D is packaged in a 400 mil 32-pin plastic SOJ.
PIN FUNCTION
Pin Name
Pin Function
A
0
- A
17
Address Inputs
WE
Write Enable
CS
Chip Select
OE
Output Enable
I/O
1
~ I/O
4
Data Inputs/Outputs
V
CC
Power(+3.3V)
V
SS
Ground
N.C
No Connection
PIN CONFIGURATION
(Top View)
Clk Gen.
I/O
1
~ I/O
4
CS
WE
OE
FUNCTIONAL BLOCK DIAGRAM
R
Data
Cont.
Column Select
CLK
Gen.
Pre-Charge Circuit
Memory Array
512 Rows
512x4 Columns
I/O Circuit &
SOJ
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A
17
A
16
A
15
A
14
A
13
OE
I/O
4
Vss
Vcc
I/O
3
A
12
A
11
A
10
A
9
A
8
N.C
N.C
A
0
A
1
A
2
A
3
CS
I/O
1
Vcc
Vss
I/O
2
WE
A
4
A
5
A
6
A
7
N.C
A
10
A
11
A
12
A
13
A
14
A
15
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
A
16
A
17
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6R1004V1D-JC(I)08 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| K6R1004V1D-JC(I)10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| K6R1004V1D-JC08 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1004V1D-JC08/10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| K6R1004V1D-JC10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
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