參數(shù)資料
型號: K6F3216T6M-F
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
中文描述: 200萬x16位超低功耗和低電壓的CMOS靜態(tài)RAM全
文件頁數(shù): 1/9頁
文件大小: 167K
代理商: K6F3216T6M-F
K6F3216T6M Family
Revision 1.0
November 2002
1
CMOS SRAM
Document Title
2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No.
1.0
Remark
Final
History
Draft Date
November 4, 2003
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K6F3216U6M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F3216U6M-F 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4008U2E 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4008U2E-EF55 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4008U2E-EF70 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM