參數(shù)資料
型號: K6F4008U2E
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM
中文描述: 為512k × 8位超低功耗和低電壓的CMOS靜態(tài)RAM全
文件頁數(shù): 1/9頁
文件大?。?/td> 110K
代理商: K6F4008U2E
Revision 1.0
March 2001
K6F4008U2E Family
- 1 -
CMOS SRAM
Document Title
512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
Revision History
Revision No.
0.0
1.0
Remark
Preliminary
Final
History
Initial Draft
Finalize
Draft Date
October 25, 2000
March 12, 2001
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相關代理商/技術參數(shù)
參數(shù)描述
K6F4008U2E-EF55 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4008U2E-EF70 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4008U2E-F 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4008U2G 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4008U2G-F 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM