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參數(shù)資料
| 型號(hào)： | K6F3216U6M |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| 中文描述： | 200萬(wàn)x16位超低功耗和低電壓的CMOS靜態(tài)RAM全 |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大?。?/td> | 150K |
| 代理商： | K6F3216U6M |
K6F3216U6M Family
Revision 1.0
December 2002
1
CMOS SRAM
Document Title
2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No.
0.0
0.1
1.0
Remark
Preliminary
Preliminary
Final
History
Initial draft
Revised
- Changed I
CC2
from 35mA to 40mA for 55ns product
from 25mA to 35mA for 70ns product
- Changed I
SB1
from 30
μ
A to 40
μ
A
- Changed I
DR
from 15
μ
A to 20
μ
A
Finalize
Draft Date
January 31, 2002
July 30, 2002
December 18, 2002
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6F3216U6M-F | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F4008U2E | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F4008U2E-EF55 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F4008U2E-EF70 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F4008U2E-F | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
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