參數(shù)資料
型號: K4R881869
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
中文描述: 288Mbit RDRAM的為512k × 18位× 2 * 16屬銀行直接RDRAMTM
文件頁數(shù): 58/64頁
文件大小: 4084K
代理商: K4R881869
Page 56
Direct RDRAM
K4R881869M
Rev. 0.9 Jan. 2000
Preliminary
Capacitance and Inductance
Figure 60 shows the equivalent load circuit of the RSL and
CMOS pins. The circuit models the load that the device
presents to the Channel.
Figure 60: Equivalent Load Circuit for RSL Pins
Gnd Pin
CTM,CTMN,
CFM,CFMN Pin
Pad
L
I
R
I
C
I
Gnd Pin
SCK,CMD Pin
Pad
L
I,CMOS
C
I,CMOS
Gnd Pin
SIO0,SIO1 Pin
Pad
L
I,CMOS
C
I,CMOS,SIO
Gnd Pin
DQA,DQB,RQ Pin
Pad
L
I
R
I
C
I
相關PDF資料
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K4R881869M 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
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