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參數(shù)資料
| 型號： | K4R881869 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| 中文描述： | 288Mbit RDRAM的為512k × 18位× 2 * 16屬銀行直接RDRAMTM |
| 文件頁數(shù)： | 35/64頁 |
| 文件大小： | 4084K |
| 代理商： | K4R881869 |
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Page 33
Direct RDRAM
K4R881869M
Rev. 0.9 Jan. 2000
Preliminary
. .
Read-only register.
Figure 29: CNFGB Register
15 14 13 12 11 10
SVER5..0
= 000000
9
8
CORG4..0
= 01000
7
6
5
4
3
DEVTYP2..0
= 000
2
1
0
Control Register: CNFGB
Address: 024
16
0
0
0
0
0
0
0
0
0
0
1
0
B
BYT - Byte width. B=1 means the device reads and
writes 9-bit memory bytes. B=0 means 8 bits.
DEVTYP2..0 - Device type. DEVTYP = 000 means
that this device is an RDRAM.
BYT
SPT
SPT - Split-core. SPT=1 means the core is split, SPT=0 means it is not.
CORG4..0 - Core organization. This field specifies the number of bank (5
bits), row (9 bits), and column (7 bits) address bits.
SVER5..0 - Stepping version. Specifies the mask version number of this
device.
Figure 30: TEST Register
15 14 13 12 11 10
9
8
7
6
5
4
3
2
1
0
Read/write register.
Reset value of TEST34 is zero (from SIO Reset)
This register are used for testing purposes. It must not
be read or written after SIO Reset.
Control Register: TEST34
Address: 022
16
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Figure 31: DEVID Register
15 14 13 12 11 10
9
8
7
6
5
4
3
2
1
0
Read/write register.
Reset value is undefined.
Device Identification register.
DEVID4..DEVID0 is compared to DR4..DR0,
DC4..DC0, and DX4..DX0 fields for all memory read
or write transactions. This determines which RDRAM
is selected for the memory read or write transaction.
Control Register: DEVID
Address: 040
16
0
DEVID4..DEVID0
0
0
0
0
0
0
0
0
0
0
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PDF描述 |
|---|---|
| K4R881869M | 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| K4R881869M-NbCcG6 | 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| K4R881869M-NCK7 | 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| K4R881869M-NCK8 | 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| K4S280432A | 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4R881869D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256/288Mbit RDRAM(D-die) |
| K4R881869D-FCM8 | 制造商:Samsung Electro-Mechanics 功能描述:16M X 18 DIRECT RAMBUS DRAM, PBGA92 |
| K4R881869EFCT9 | 制造商:Samsung Semiconductor 功能描述: |
| K4R881869E-GCM8000 | 制造商:Samsung Semiconductor 功能描述:DRAM CHIP DIRECT RDRAM 288MBIT 2.5V 92PIN WBGA - Bulk |
| K4R881869E-GCM8T00 | 制造商:Samsung Semiconductor 功能描述:288MRDRAMDIRECT RDRAMX18WBGA - Tape and Reel |
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