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參數(shù)資料
| 型號： | K4H510838F-LCCC |
| 元件分類： | DRAM |
| 英文描述： | 64M X 8 DDR DRAM, 0.65 ns, PDSO66 |
| 封裝： | 0.400 X 0.875 INCH, 0.65 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-66 |
| 文件頁數(shù)： | 14/24頁 |
| 文件大?。?/td> | 361K |
| 代理商： | K4H510838F-LCCC |
Rev. 1.1 November 2008
DDR SDRAM
K4H510438F
K4H510838F
K4H511638F
21 of 24
Figure 4. I/V characteristics for input/output buffers:Pulldown(above) and pullup(below)
Maximum
Typical High
Minumum
Vout(V)
Iout
(mA)
-220
-200
-180
-160
-140
-120
-100
-80
-60
-40
-20
0
0.0
1 .0
2.0
Minimum
Typical Low
Typical High
Maximum
0
20
40
60
80
100
120
140
160
0.0
0.5
1.0
1.5
2.0
2.5
Iout
(mA)
Typical Low
Vout(V)
Pulldown Characteristics for Full Strength Output Driver
Pullup Characteristics for Full Strength Output Driver
DDR SDRAM Output Driver V-I Characteristics
DDR SDRAM Output driver characteristics are defined for full and half strength operation as selected by the EMRS bit A1.
Figures 4 and 5 show the driver characteristics graphically, and tables 8 and 9 show the same data in tabular format suitable for input
into simulation tools. The driver characteristcs evaluation conditions are:
Output Driver Characteristic Curves Notes:
1. The full variation in driver current from minimum to maximum process, temperature and voltage will lie within the outer bounding lines
the of the V-I curve of Figures 4 and 5.
2. It is recommended that the "typical" IBIS V-I curve lie within the inner bounding lines of the V-I curves of Figures 4 and 5.
3. The full variation in the ratio of the "typical" IBIS pullup to "typical" IBIS pulldown current should be unity +/- 10%, for device drain to
source voltages from 0.1 to1.0. This specification is a design objective only. It is not guaranteed.
Typical
25×C
VDD/VDDQ = 2.5V, typical process
Minimum
70×C
VDD/VDDQ = 2.3V, slow-slow process
Maximum
0×C
VDD/VDDQ = 2.7V, fast-fast process
23.0 IBIS : I/V Characteristics for Input and Output Buffers
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