參數(shù)資料
型號: JS28F640P30B85
廠商: INTEL CORP
元件分類: DRAM
英文描述: Intel StrataFlash Embedded Memory
中文描述: 4M X 16 FLASH 1.8V PROM, 85 ns, PDSO56
封裝: 14 X 20 MM, LEAD FREE, TSOP-56
文件頁數(shù): 33/102頁
文件大?。?/td> 1609K
代理商: JS28F640P30B85
1-Gbit P30 Family
Datasheet
Intel StrataFlash
Embedded Memory (P30)
Order Number: 306666, Revision: 001
April 2005
33
7.0
AC Characteristics
7.1
AC Test Conditions
Note:
AC test inputs are driven at V
for Logic "1" and 0.0 V for Logic "0." Input/output timing begins/ends
at V
CCQ
/2. Input rise and fall times (10% to 90%) < 5 ns. Worst case speed occurs at V
CC
= V
CC
Min.
NOTES:
1.
2.
3.
See the following table for component values.
Test configuration component value for worst case speed conditions.
C
L
includes jig capacitance
.
Figure 13.
AC Input/Output Reference Waveform
Input V
CCQ
/2
V
CCQ
/2 Output
V
CCQ
0V
Test Points
Figure 14.
Transient Equivalent Testing Load Circuit
Device
Under Test
Out
C
L
Table 14.
Test configuration component value for worst case speed conditions
Test Configuration
C
L
(pF)
30
V
CCQ
Min Standard Test
Figure 15.
Clock Input AC Waveform
CLK [C]
V
IH
V
IL
R203
R202
R201
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