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| 型號： | JDP2S10U |
| 元件分類： | PIN二極管 |
| 英文描述： | 50 V, SILICON, PIN DIODE |
| 封裝： | 1-1E1A, 2 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 171K |
| 代理商： | JDP2S10U |
JDP2S10U
2009-07-24
1
TOSHIBA Diode Silicon Epitaxial Pin Type
JDP2S10U
VHF~UHF Band RF Attenuator Applications
Useful for small size tuner
Small total capacitance: CT = 0.68 pF (typ.)
Low series resistance: rs = 2.1 (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
VR
50
V
Forward current
IF
50
mA
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55 to 125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
VR
IR = 10 μA
50
V
Reverse current
IR
VR = 50 V
0.6
μA
Forward voltage
VF
IF = 10 mA
0.76
0.82
V
Total capacitance
CT
VR = 1 V, f = 1 MHz
0.7
1.0
pF
Series resistance
rs
IF = 10 mA, f = 100 MHz
2.1
5.0
Ω
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
1-1E1A
Weight: 4.0 mg (typ.)
Ｆ３
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